InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
Increasing reliance on the Internet places greater and greater demands for high-speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes (APDs), must be improved. The APDs rely on In0.53Ga0.47As (grown lattice-matched to InP substrates) to efficiently absorb and detect the optical signals with 1310 or 1550 nm wavelength, the optimal wavelengths of operation for these optical links. Thus developing InP-compatible APDs with high gain-bandwidth product (GBP) is important to the overall effort of increasing optical links’ data transfer rate. Here we demonstrate a novel InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is clearly applicable to future optical communication systems at or above 10 Gb/s. The data reported in this article are available from the figshare digital repository.
24242-24247
Xie, Shiyu
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Zhou, Xinxin
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Zhang, Shiyong
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Thomson, David
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Chen, Xia
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Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Ng, Jo
e46b749d-5a8e-4282-84ed-0629ec6691b1
Tan, Chee
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17 October 2016
Xie, Shiyu
c32aa5f0-1694-4ff2-8be0-287259d93796
Zhou, Xinxin
050e976e-8c21-4b1d-8f12-8e49ebeaa0c1
Zhang, Shiyong
92ebb493-b96d-423a-a917-fd369e3afa6a
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Ng, Jo
e46b749d-5a8e-4282-84ed-0629ec6691b1
Tan, Chee
36294c4f-d0d2-45e5-9ba9-308d78bb2426
Xie, Shiyu, Zhou, Xinxin, Zhang, Shiyong, Thomson, David, Chen, Xia, Reed, Graham, Ng, Jo and Tan, Chee
(2016)
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product.
Optics Express, 24 (21), .
(doi:10.1364/OE.24.024242).
Abstract
Increasing reliance on the Internet places greater and greater demands for high-speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes (APDs), must be improved. The APDs rely on In0.53Ga0.47As (grown lattice-matched to InP substrates) to efficiently absorb and detect the optical signals with 1310 or 1550 nm wavelength, the optimal wavelengths of operation for these optical links. Thus developing InP-compatible APDs with high gain-bandwidth product (GBP) is important to the overall effort of increasing optical links’ data transfer rate. Here we demonstrate a novel InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is clearly applicable to future optical communication systems at or above 10 Gb/s. The data reported in this article are available from the figshare digital repository.
Text
oe-24-21-24242
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Accepted/In Press date: 13 September 2016
e-pub ahead of print date: 11 October 2016
Published date: 17 October 2016
Organisations:
Optoelectronics Research Centre, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 411878
URI: http://eprints.soton.ac.uk/id/eprint/411878
ISSN: 1094-4087
PURE UUID: c44710e8-3f6d-4740-b8e9-e79839aeda3c
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Date deposited: 28 Jun 2017 16:31
Last modified: 15 Mar 2024 14:53
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Author:
Shiyu Xie
Author:
Xinxin Zhou
Author:
Shiyong Zhang
Author:
Xia Chen
Author:
Jo Ng
Author:
Chee Tan
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