Direct bonding diamond to zinc selenide
Direct bonding diamond to zinc selenide
We report direct bonding of 5mm dia x 500μm thick polycrystalline CVD-grown diamond to 25mm dia x 4mm ZnSe via a plasma-assisted technique. In addition, diamond to C-cut sapphire bonding is demonstrated via the same approach. Durability of the diamond/ZnSe bond is tested over a temperature range -40 to 150 ºC and under various ramp rates, demonstrating strong adhesion over the majority of the bond up to a temperature of 80 ºC. Optical transmission at a wavelength of 1μm shows near ideal transmission when compared to bare ZnSe. Heatspreading performance of the bonded composite is investigated using a pump-probe arrangement, demonstrating at least two-orders of magnitude reduction in the thermal-lens power compared to ZnSe alone.
Direct Bonding, ZnSe, Diamond, Plasma
2922-2927
Stenhouse, Henry G.
eca122ea-7a55-4d12-9993-14a84d9f6f67
Beecher, Stephen J.
b3664adc-d6b5-4a5a-a09a-8e1415c6d3f5
Mackenzie, Jacob I.
1d82c826-fdbf-425b-ac04-be43ccf12008
20 July 2017
Stenhouse, Henry G.
eca122ea-7a55-4d12-9993-14a84d9f6f67
Beecher, Stephen J.
b3664adc-d6b5-4a5a-a09a-8e1415c6d3f5
Mackenzie, Jacob I.
1d82c826-fdbf-425b-ac04-be43ccf12008
Stenhouse, Henry G., Beecher, Stephen J. and Mackenzie, Jacob I.
(2017)
Direct bonding diamond to zinc selenide.
Optical Materials Express, 7 (8), .
(doi:10.1364/OME.7.002922).
Abstract
We report direct bonding of 5mm dia x 500μm thick polycrystalline CVD-grown diamond to 25mm dia x 4mm ZnSe via a plasma-assisted technique. In addition, diamond to C-cut sapphire bonding is demonstrated via the same approach. Durability of the diamond/ZnSe bond is tested over a temperature range -40 to 150 ºC and under various ramp rates, demonstrating strong adhesion over the majority of the bond up to a temperature of 80 ºC. Optical transmission at a wavelength of 1μm shows near ideal transmission when compared to bare ZnSe. Heatspreading performance of the bonded composite is investigated using a pump-probe arrangement, demonstrating at least two-orders of magnitude reduction in the thermal-lens power compared to ZnSe alone.
Text
HenryStenhouseOpMatExpress2017
- Accepted Manuscript
More information
Accepted/In Press date: 27 June 2017
e-pub ahead of print date: 20 July 2017
Published date: 20 July 2017
Keywords:
Direct Bonding, ZnSe, Diamond, Plasma
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 412066
URI: http://eprints.soton.ac.uk/id/eprint/412066
PURE UUID: 65ae5d00-8c66-46c7-bf90-6ecd43094fbf
Catalogue record
Date deposited: 05 Jul 2017 16:31
Last modified: 16 Mar 2024 05:27
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Contributors
Author:
Henry G. Stenhouse
Author:
Stephen J. Beecher
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