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Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics

Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics
Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics
Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3–y buffer layers incorporated between TiO2–x thin films taking into account both 3þ/4þ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3–y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.
Active layer, Magnetization reversals, sputter deposition, thin film thickness, thin film devices
0021-8979
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Khiat, Ali and Prodromakis, Themistoklis (2017) Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics. Journal of Applied Physics, 121 (18). (doi:10.1063/1.4983006).

Record type: Article

Abstract

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3–y buffer layers incorporated between TiO2–x thin films taking into account both 3þ/4þ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3–y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

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Improved switching characteristics of TiO2-x ReRAM with embedded ultra-thin - Accepted Manuscript
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Accepted/In Press date: 28 March 2017
e-pub ahead of print date: 12 May 2017
Keywords: Active layer, Magnetization reversals, sputter deposition, thin film thickness, thin film devices

Identifiers

Local EPrints ID: 412097
URI: https://eprints.soton.ac.uk/id/eprint/412097
ISSN: 0021-8979
PURE UUID: c132204e-396a-4cdd-8cd0-7a35f7c2aeac
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 10 Jul 2017 16:31
Last modified: 10 Sep 2019 00:35

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Contributors

Author: Maria Trapatseli
Author: Simone Cortese
Author: Alexantrou Serb
Author: Ali Khiat

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