Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices

Abstract

Single-quantum emitters are an important resource for photonic quantum technologies, constituting a basic building block for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of these functions can be achieved through systems that both promote strong light-matter interactions between the emitter and a light field, and provide an efficient, low-loss optical access channel to the emitter. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we describe a heterogeneous integration platform that combines a mature class of solid-state quantum emitters, InAs/GaAs quantum dots, with low-loss passive photonic circuits, providing the aforementioned capabilities in a scalable, on-chip implementation. We demonstrate low-loss Si3N4 waveguides integrated with GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots. This platform supports functional elements in both GaAs and Si3N4 layers, with performance approaching that of devices optimized for each material individually. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single quantum dots in GaAs geometries, and significant control of light-matter interactions by enhancing the quantum dot radiative rate in microcavites, by a factor of 4. We furthermore outline a path towards reaching the non-perturbative strong coupling regime within this platform, a requirement for advanced quantum information protocols.

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