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Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices

Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices
Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices
Single-quantum emitters are an important resource for photonic quantum technologies, constituting a basic building block for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of these functions can be achieved through systems that both promote strong light-matter interactions between the emitter and a light field, and provide an efficient, low-loss optical access channel to the emitter. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we describe a heterogeneous integration platform that combines a mature class of solid-state quantum emitters, InAs/GaAs quantum dots, with low-loss passive photonic circuits, providing the aforementioned capabilities in a scalable, on-chip implementation. We demonstrate low-loss Si3N4 waveguides integrated with GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots. This platform supports functional elements in both GaAs and Si3N4 layers, with performance approaching that of devices optimized for each material individually. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single quantum dots in GaAs geometries, and significant control of light-matter interactions by enhancing the quantum dot radiative rate in microcavites, by a factor of 4. We furthermore outline a path towards reaching the non-perturbative strong coupling regime within this platform, a requirement for advanced quantum information protocols.
Davanco, Marcelo
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Liu, Jin
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Sapienza, Luca
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Zhang, Chen-Zhao
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De Miranda Cardoso, Jose Vinicus
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Verma, Varun
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Mirin, Richard
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Nam, Sae Woo
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Liu, Liu
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Srinivasan, Kartik
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Davanco, Marcelo
cfacc6c8-a09b-4b66-95e5-074b69930d91
Liu, Jin
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Sapienza, Luca
a2e0cf6c-1f22-4a5a-87a2-ffab0e24e6ac
Zhang, Chen-Zhao
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De Miranda Cardoso, Jose Vinicus
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Verma, Varun
7df9e64d-8b06-4ec8-bfe6-e51fb1bd491f
Mirin, Richard
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Nam, Sae Woo
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Liu, Liu
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Srinivasan, Kartik
419dfd1a-2440-44de-9530-7aaa9383bc15

Davanco, Marcelo, Liu, Jin, Sapienza, Luca, Zhang, Chen-Zhao, De Miranda Cardoso, Jose Vinicus, Verma, Varun, Mirin, Richard, Nam, Sae Woo, Liu, Liu and Srinivasan, Kartik (2017) Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices. Nature Communications, 8, [889]. (doi:10.1038/s41467-017-00987-6).

Record type: Article

Abstract

Single-quantum emitters are an important resource for photonic quantum technologies, constituting a basic building block for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of these functions can be achieved through systems that both promote strong light-matter interactions between the emitter and a light field, and provide an efficient, low-loss optical access channel to the emitter. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we describe a heterogeneous integration platform that combines a mature class of solid-state quantum emitters, InAs/GaAs quantum dots, with low-loss passive photonic circuits, providing the aforementioned capabilities in a scalable, on-chip implementation. We demonstrate low-loss Si3N4 waveguides integrated with GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots. This platform supports functional elements in both GaAs and Si3N4 layers, with performance approaching that of devices optimized for each material individually. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single quantum dots in GaAs geometries, and significant control of light-matter interactions by enhancing the quantum dot radiative rate in microcavites, by a factor of 4. We furthermore outline a path towards reaching the non-perturbative strong coupling regime within this platform, a requirement for advanced quantum information protocols.

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Accepted/In Press date: 9 August 2017
e-pub ahead of print date: 12 October 2017

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Local EPrints ID: 412129
URI: http://eprints.soton.ac.uk/id/eprint/412129
PURE UUID: 6031c26e-61ce-4c2e-83db-afdf39fd4fbf

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Date deposited: 29 May 2018 16:31
Last modified: 07 Oct 2020 05:00

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