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A systematic method for simulating total ionizing dose effects using the finite elements method

A systematic method for simulating total ionizing dose effects using the finite elements method
A systematic method for simulating total ionizing dose effects using the finite elements method
Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO2 capacitors irradiated at total doses of 11.6 kRad (SiO2) and 58 kRad (SiO2). Drift–diffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.
Total Ionizing Dose, Simulation, Finite Elements Method, oxide, MOS, carrier transport, TCAD
1569-8025
1-8
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Chatzikyriakou, Eleni, Potter, Kenneth and De Groot, Cornelis (2017) A systematic method for simulating total ionizing dose effects using the finite elements method. Journal of Computational Electronics, 1-8. (doi:10.1007/s10825-017-1027-2).

Record type: Article

Abstract

Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO2 capacitors irradiated at total doses of 11.6 kRad (SiO2) and 58 kRad (SiO2). Drift–diffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.

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Accepted/In Press date: 20 June 2017
e-pub ahead of print date: 8 July 2017
Keywords: Total Ionizing Dose, Simulation, Finite Elements Method, oxide, MOS, carrier transport, TCAD

Identifiers

Local EPrints ID: 412135
URI: https://eprints.soton.ac.uk/id/eprint/412135
ISSN: 1569-8025
PURE UUID: f8417aa5-d82e-46f5-8a67-778271bd041c
ORCID for Eleni Chatzikyriakou: ORCID iD orcid.org/0000-0002-5624-3701
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 11 Jul 2017 16:31
Last modified: 14 Mar 2019 01:46

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