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Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes
Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes
Germanium (Ge) (111) fins of 320 nm in height were successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fins by Ge homogeneous epitaxial growth. The excellent electrical characteristics of Ge(111) fin light-emitting diodes, such as an ideality factor of 1.1 and low dark current density of 7.1 × 10−5 A cm−2 at reverse bias of −2 V, indicate their good crystalline quality. A tensile strain of 0.2% in the Ge fins, which originated from the mismatch of the thermal expansion coefficients between Ge and the covering SiO2 layers, was expected from the room-temperature photoluminescence spectra, and room-temperature electroluminescence corresponding to the direct band-gap transition was observed from the Ge fins.
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Tani, Kazuki
1552512f-5b92-4f4a-bcc9-110f9704239a
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Miura, Makoto
133f5d23-a819-4754-8dae-00ffc247cbfc
Wakayama, Yuki
9e7cc1a1-1669-4d16-a917-277cd5a500d3
Okumura, Tadashi
b3fa1423-d712-4bc0-9ac1-102cc4f8784a
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Ido, Tatemi
e05a93c5-2e59-46cf-84c7-2d1d48646e9d
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Tani, Kazuki
1552512f-5b92-4f4a-bcc9-110f9704239a
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Miura, Makoto
133f5d23-a819-4754-8dae-00ffc247cbfc
Wakayama, Yuki
9e7cc1a1-1669-4d16-a917-277cd5a500d3
Okumura, Tadashi
b3fa1423-d712-4bc0-9ac1-102cc4f8784a
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Ido, Tatemi
e05a93c5-2e59-46cf-84c7-2d1d48646e9d

Saito, Shinichi, Tani, Kazuki, Oda, Katsuya, Miura, Makoto, Wakayama, Yuki, Okumura, Tadashi, Mine, T. and Ido, Tatemi (2017) Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes. Japanese Journal of Applied Physics, 56 (3), [032102]. (doi:10.7567/JJAP.56.032102).

Record type: Article

Abstract

Germanium (Ge) (111) fins of 320 nm in height were successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fins by Ge homogeneous epitaxial growth. The excellent electrical characteristics of Ge(111) fin light-emitting diodes, such as an ideality factor of 1.1 and low dark current density of 7.1 × 10−5 A cm−2 at reverse bias of −2 V, indicate their good crystalline quality. A tensile strain of 0.2% in the Ge fins, which originated from the mismatch of the thermal expansion coefficients between Ge and the covering SiO2 layers, was expected from the room-temperature photoluminescence spectra, and room-temperature electroluminescence corresponding to the direct band-gap transition was observed from the Ge fins.

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More information

Accepted/In Press date: 7 December 2016
e-pub ahead of print date: 7 February 2017
Published date: 7 February 2017

Identifiers

Local EPrints ID: 412352
URI: http://eprints.soton.ac.uk/id/eprint/412352
PURE UUID: cc4bd1ff-c59c-4223-9677-7e589da7c77c
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 17 Jul 2017 13:31
Last modified: 07 Oct 2020 03:36

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