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SiGe bandgap tuning for high speed Eam

SiGe bandgap tuning for high speed Eam
SiGe bandgap tuning for high speed Eam
We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.
Mastronardi, L.
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Banakar, M.
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Khokhar, A.Z.
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Domínguez Bucio, Thalía
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Littlejohns, C.G.
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Bernier, N.
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Robin, E.
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Rouviere, C.
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Dansas, H.
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Gambacorti, N.
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Mashanovich, G.Z.
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Gardes, F.Y.
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Mastronardi, L.
5f46303c-8516-4038-bb3f-8720a3b28d25
Banakar, M.
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Littlejohns, C.G.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Bernier, N.
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Robin, E.
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Rouviere, C.
63c77c06-f73a-4f1b-a952-aa77bb172057
Dansas, H.
8b58fd08-731a-4ba2-9a72-502f23171127
Gambacorti, N.
268cee51-4efa-4371-870c-95237ed1d07c
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2

Mastronardi, L., Banakar, M., Khokhar, A.Z., Domínguez Bucio, Thalía, Littlejohns, C.G., Bernier, N., Robin, E., Rouviere, C., Dansas, H., Gambacorti, N., Mashanovich, G.Z. and Gardes, F.Y. (2017) SiGe bandgap tuning for high speed Eam. 231st ECS Meeting, New Orleans, United States. 28 May - 01 Jun 2017. 5 pp . (In Press)

Record type: Conference or Workshop Item (Paper)

Abstract

We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.

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SiGe bandgap tuning for high speed eam - Accepted Manuscript
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More information

Accepted/In Press date: 4 April 2017
Venue - Dates: 231st ECS Meeting, New Orleans, United States, 2017-05-28 - 2017-06-01

Identifiers

Local EPrints ID: 413003
URI: https://eprints.soton.ac.uk/id/eprint/413003
PURE UUID: c212e5b4-5dec-4764-baab-87fd9cc285f8
ORCID for L. Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

Catalogue record

Date deposited: 10 Aug 2017 16:31
Last modified: 19 Mar 2019 01:26

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