SiGe bandgap tuning for high speed Eam
SiGe bandgap tuning for high speed Eam
We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.
Mastronardi, Lorenzo
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Banakar, M.
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Khokhar, A.Z.
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Domínguez Bucio, Thalía
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Littlejohns, Callum
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Bernier, N.
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Robin, E.
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Rouviere, C.
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Dansas, H.
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Gambacorti, N.
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Mashanovich, G.Z.
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Gardes, F.Y.
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Mastronardi, Lorenzo
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Banakar, M.
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Khokhar, A.Z.
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Domínguez Bucio, Thalía
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Littlejohns, Callum
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Bernier, N.
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Robin, E.
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Rouviere, C.
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Dansas, H.
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Gambacorti, N.
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Mashanovich, G.Z.
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Gardes, F.Y.
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Mastronardi, Lorenzo, Banakar, M., Khokhar, A.Z., Domínguez Bucio, Thalía, Littlejohns, Callum, Bernier, N., Robin, E., Rouviere, C., Dansas, H., Gambacorti, N., Mashanovich, G.Z. and Gardes, F.Y.
(2017)
SiGe bandgap tuning for high speed Eam.
231st ECS Meeting, , New Orleans, United States.
28 May - 01 Jun 2017.
5 pp
.
(In Press)
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.
Text
SiGe bandgap tuning for high speed eam
- Accepted Manuscript
More information
Accepted/In Press date: 4 April 2017
Venue - Dates:
231st ECS Meeting, , New Orleans, United States, 2017-05-28 - 2017-06-01
Identifiers
Local EPrints ID: 413003
URI: http://eprints.soton.ac.uk/id/eprint/413003
PURE UUID: c212e5b4-5dec-4764-baab-87fd9cc285f8
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Date deposited: 10 Aug 2017 16:31
Last modified: 16 Mar 2024 04:36
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Contributors
Author:
Lorenzo Mastronardi
Author:
A.Z. Khokhar
Author:
N. Bernier
Author:
E. Robin
Author:
C. Rouviere
Author:
H. Dansas
Author:
N. Gambacorti
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