Tip-Enhanced Raman characterization of He-ion-irradiated CVD graphene channels

Abstract

Graphene has been attracting significant attention for various types of device applications due to its unique properties emerging from the atomically-thin 2-dimentional layer. In particular for micro- and nanoscale device applications, how to control defects in graphene and how to observe the effects of defects are some of the most important issues to understand mechanisms behind device operation and to gain more flexibility in designing device structures [1,2]. While oxygen plasma, ion bombardment and focused ion beam (FIB) have been employed to introduce defects [1-3], helium ion irradiation via Helium Ion Microscope (HIM) is an attractive method because of excellent spatial resolution and position controllability. Effects of He ion irradiation on graphene have been investigated via Raman spectroscopy [4] and transport properties [5]. However to study the edge and boundary between the irradiated and non-irradiated regions, advanced tools with higher spatial resolution would be useful. In this work we have applied Tip-Enhanced Raman Spectroscopy (TERS) for He-ion-irradiated graphene for the first time to study effects of irradiation in details, in particular focusing on the boundary of the irradiated regions.

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Identifiers

ORCID for Stuart Boden: orcid.org/0000-0002-4232-1828

ORCID for Harold Chong: orcid.org/0000-0002-7110-5761

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