Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared
Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared
WDM components fabricated on the silicon-on-insulator platform have transmission characteristics that are sensitive to dimensional errors and temperature variations due to the high refractive index and thermo-optic coefficient of Si, respectively. We propose the use of NH3-free SiNx layers to fabricate athermal (de)multiplexers based on angled multimode interferometers (AMMI) in order to achieve good spectral responses with high tolerance to dimensional errors. With this approach we have shown that stoichiometric and N-rich SiNx layers can be used to fabricate AMMIs with cross-talk<30dB, insertion loss <2.5dB, sensitivity to dimensional errors <120pm/nm, and wavelength shift <10pm/°C.
Silicon Nitride, Integrated optics devices, wavelength-division multiplexing (WDM), Silicon photonics
27310-27320
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalía, Khokhar, Ali, Mashanovich, Goran and Gardes, Frederic
(2017)
Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared.
Optics Express, 25 (22), .
(doi:10.1364/OE.25.027310).
Abstract
WDM components fabricated on the silicon-on-insulator platform have transmission characteristics that are sensitive to dimensional errors and temperature variations due to the high refractive index and thermo-optic coefficient of Si, respectively. We propose the use of NH3-free SiNx layers to fabricate athermal (de)multiplexers based on angled multimode interferometers (AMMI) in order to achieve good spectral responses with high tolerance to dimensional errors. With this approach we have shown that stoichiometric and N-rich SiNx layers can be used to fabricate AMMIs with cross-talk<30dB, insertion loss <2.5dB, sensitivity to dimensional errors <120pm/nm, and wavelength shift <10pm/°C.
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Rev2
- Accepted Manuscript
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oe-25-22-27310
- Version of Record
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Accepted/In Press date: 22 September 2017
e-pub ahead of print date: 23 October 2017
Keywords:
Silicon Nitride, Integrated optics devices, wavelength-division multiplexing (WDM), Silicon photonics
Identifiers
Local EPrints ID: 414382
URI: http://eprints.soton.ac.uk/id/eprint/414382
ISSN: 1094-4087
PURE UUID: 7864b101-8729-4eee-a14f-6496b25a51fb
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Date deposited: 28 Sep 2017 16:31
Last modified: 29 Oct 2024 02:45
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