Fermi level tuning of ZnO films through supercycled atomic layer deposition
Fermi level tuning of ZnO films through supercycled atomic layer deposition
A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.
Atomic layer deposition, Fermi level, Kelvin probe force microscopy, ZnO
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Ye, Sheng
41d5b4a0-6d97-43a2-a1fa-7cdbbf5bc1cd
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Kiang, Kian
fdb609c6-75aa-4893-85c8-8e50edfda7fe
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
2017
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Ye, Sheng
41d5b4a0-6d97-43a2-a1fa-7cdbbf5bc1cd
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Kiang, Kian
fdb609c6-75aa-4893-85c8-8e50edfda7fe
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng, Ye, Sheng, Sun, Kai, Kiang, Kian and De Groot, Cornelis
(2017)
Fermi level tuning of ZnO films through supercycled atomic layer deposition.
Nanoscale Research Letters, 12.
(doi:10.1186/s11671-017-2308-1).
Abstract
A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.
Text
Huang2017b
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Accepted/In Press date: 8 September 2017
e-pub ahead of print date: 19 September 2017
Published date: 2017
Keywords:
Atomic layer deposition, Fermi level, Kelvin probe force microscopy, ZnO
Identifiers
Local EPrints ID: 414682
URI: http://eprints.soton.ac.uk/id/eprint/414682
ISSN: 1931-7573
PURE UUID: aedf449f-1397-4b47-8f88-7767164e985b
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Date deposited: 05 Oct 2017 16:31
Last modified: 16 Mar 2024 04:10
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Author:
Ruomeng Huang
Author:
Sheng Ye
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