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Direct bonding Nd:YAG to sapphire wafers

Direct bonding Nd:YAG to sapphire wafers
Direct bonding Nd:YAG to sapphire wafers
We demonstrate chemical-assisted direct bonding of 450μm-thick neodymium-doped YAG to 660μm-thick sapphire wafers. Diced, polished and AR-coated the composite was trialed in a pump-guided free-space laser. Preliminary performance and future prospects will be discussed.
Direct Bonding, Sapphire, Nd:YAG, Plasma activation
OSA
Stenhouse, Henry G.
eca122ea-7a55-4d12-9993-14a84d9f6f67
Beecher, Stephen J.
b3664adc-d6b5-4a5a-a09a-8e1415c6d3f5
Mackenzie, Jacob I.
1d82c826-fdbf-425b-ac04-be43ccf12008
Stenhouse, Henry G.
eca122ea-7a55-4d12-9993-14a84d9f6f67
Beecher, Stephen J.
b3664adc-d6b5-4a5a-a09a-8e1415c6d3f5
Mackenzie, Jacob I.
1d82c826-fdbf-425b-ac04-be43ccf12008

Stenhouse, Henry G., Beecher, Stephen J. and Mackenzie, Jacob I. (2017) Direct bonding Nd:YAG to sapphire wafers. In Advanced Solid State Lasers 2017. OSA. 3 pp . (doi:10.1364/ASSL.2017.JM5A.3).

Record type: Conference or Workshop Item (Paper)

Abstract

We demonstrate chemical-assisted direct bonding of 450μm-thick neodymium-doped YAG to 660μm-thick sapphire wafers. Diced, polished and AR-coated the composite was trialed in a pump-guided free-space laser. Preliminary performance and future prospects will be discussed.

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NdYag - Sapphire Poster - Version of Record
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More information

Submitted date: 30 May 2017
Accepted/In Press date: 17 July 2017
Published date: 2 October 2017
Venue - Dates: OSA Laser Congress: Advanced Solid State Lasers 2017, Nagoya, Japan, 2017-10-01 - 2017-10-05
Keywords: Direct Bonding, Sapphire, Nd:YAG, Plasma activation

Identifiers

Local EPrints ID: 415677
URI: https://eprints.soton.ac.uk/id/eprint/415677
PURE UUID: df6ee3c0-add1-44b3-b9d7-d0435b138968
ORCID for Jacob I. Mackenzie: ORCID iD orcid.org/0000-0002-3355-6051

Catalogue record

Date deposited: 20 Nov 2017 17:30
Last modified: 20 Jul 2019 01:06

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