Description of file: "Data for Nedeljkovic et al Optics Express Sep 2017 paper.xlsx"

This .xslx file contains the tabulated numerical data used to create the figures in "Germanium-on-silicon waveguides operating at mid-infrared wavelengths up to 8.5um", 
by Milos Nedeljkovic, Jordi Soler Penades, Vinita Mittal, Ganapathy Senthil Murugan, Ali Z. Khokhar, Callum Littlejohns, Lewis G. Carpenter, Corin B. E. Gawith, James S. Wilkinson, and Goran Z. Mashanovich
published in Optics Express, accepted in September 2017.

Data is given in separate sheets of the Excel file for the following figures:

Figure 2: "Black line with circles shows for different wavelengths the simulated waveguide
width at which the 1st higher order TE mode appears, in a Ge-on-Si waveguide with height
3 um and etch depth 1.8 um at different wavelengths. The solid line (red) shows the simulated
propagation loss for a waveguide at that same width and wavelength, with a Float
Zone (FZ) Si substrate. The dotted line (blue) shows the simulated propagation loss for a
waveguide at that same width and wavelength, but with a Czhochralski (CZ) Si substrate.
The loss values only include loss coming from bulk material absorption of Ge and Si."

Figure 3a: "Simulated grating coupler response for 400 um long grating with etch depth 1.0
um, period = 2.0 um and duty cycle = 0.7, showing fractions of power radiated upwards
and reflected back into the access waveguide, for lambda = 6.0-9.5 um."

Figure 6a: "Propagation loss (dB/cm) measured for Ge-on-Si waveguides at wavelengths between
7.5 and 8.5 um."

Figure 6b: "Effective cut-back loss measurement at a single wavelength, lambda =
7.825 um. The transmission is normalized to the transmission through the shortest waveguide."

Figure 6c: "Multimode interferometer insertion loss measurement at lambda = 7.9 um, showing
normalized transmission for chains of different numbers of MMIs. The insertion loss at
this wavelength is 0.23+/-0.04 dB."

Figure 7: "Estimated Ge-on-Si waveguide loss from sidewall roughness scattering, with an
r.m.s roughness (s) = 50 nm, and varying correlation length (Lc)."

Please contact Milos Nedeljkovic by email at m.nedeljkovic@soton.ac.uk with any further questions.