High-efficiency grating-couplers: demonstration of a new design strategy
High-efficiency grating-couplers: demonstration of a new design strategy
We present a simple and practical strategy that allows to design high-efficiency grating couplers. The technique is based on the simultaneous apodization of two structural parameters: the grating period and the fill-factor, along with the optimization of the grating coupler etching depth. Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrated a coupling efficiency of −0.8 dB (83%), well matching the experimental value of −0.9 dB (81%). Thanks to the optimized design, these results represent the best performance ever reported in the literature for SOI structures without the use of any back-reflector.
Marchetti, Riccardo
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Lacava, Cosimo
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Khokhar, Ali
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Chen, Xia
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Cristiani, Ilaria
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Richardson, David
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Reed, Graham
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Petropoulos, Periklis
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Minzioni, Paolo
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2017
Marchetti, Riccardo
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Lacava, Cosimo
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Khokhar, Ali
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Chen, Xia
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Cristiani, Ilaria
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Richardson, David
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Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Petropoulos, Periklis
522b02cc-9f3f-468e-bca5-e9f58cc9cad7
Minzioni, Paolo
b3c7ad72-d91c-42cf-be38-d949d6d2e264
Marchetti, Riccardo, Lacava, Cosimo, Khokhar, Ali, Chen, Xia, Cristiani, Ilaria, Richardson, David, Reed, Graham, Petropoulos, Periklis and Minzioni, Paolo
(2017)
High-efficiency grating-couplers: demonstration of a new design strategy.
Scientific Reports, 7, [16670].
(doi:10.1038/s41598-017-16505-z).
Abstract
We present a simple and practical strategy that allows to design high-efficiency grating couplers. The technique is based on the simultaneous apodization of two structural parameters: the grating period and the fill-factor, along with the optimization of the grating coupler etching depth. Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrated a coupling efficiency of −0.8 dB (83%), well matching the experimental value of −0.9 dB (81%). Thanks to the optimized design, these results represent the best performance ever reported in the literature for SOI structures without the use of any back-reflector.
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Marchetti_et_al-2017-Scientific_Reports
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Accepted/In Press date: 13 November 2017
e-pub ahead of print date: 30 November 2017
Published date: 2017
Identifiers
Local EPrints ID: 416125
URI: http://eprints.soton.ac.uk/id/eprint/416125
ISSN: 2045-2322
PURE UUID: f72aa6cf-bd23-46da-9b60-fa3d8850c73d
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Date deposited: 05 Dec 2017 17:30
Last modified: 16 Mar 2024 02:58
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Contributors
Author:
Riccardo Marchetti
Author:
Cosimo Lacava
Author:
Ali Khokhar
Author:
Xia Chen
Author:
Ilaria Cristiani
Author:
Paolo Minzioni
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