Enhancement of bulk second-harmonic generation from silicon nitride films by material composition
Enhancement of bulk second-harmonic generation from silicon nitride films by material composition
We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of silicon content, highlighting the controllability of the fabrication process.
5030-5033
Koskinen, K.
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Czaplicki, R.
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Slablab, A.
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Ning, T.
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Hermans, A.
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Kuyken, B.
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Mittal, V.
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Murugan, G.S.
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Niemi, T.
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Baets, R.
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Kauranen, M.
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Koskinen, K.
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Czaplicki, R.
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Slablab, A.
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Ning, T.
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Hermans, A.
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Kuyken, B.
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Mittal, V.
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Murugan, G.S.
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Niemi, T.
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Baets, R.
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Kauranen, M.
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Koskinen, K., Czaplicki, R., Slablab, A., Ning, T., Hermans, A., Kuyken, B., Mittal, V., Murugan, G.S., Niemi, T., Baets, R. and Kauranen, M.
(2017)
Enhancement of bulk second-harmonic generation from silicon nitride films by material composition.
Optics Letters, 42 (23), .
(doi:10.1364/OL.42.005030).
Abstract
We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of silicon content, highlighting the controllability of the fabrication process.
Text
Enhancement of bulk second-harmonic generation from silicon nitride films by material composition
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Accepted/In Press date: 5 November 2017
e-pub ahead of print date: 1 December 2017
Identifiers
Local EPrints ID: 416175
URI: http://eprints.soton.ac.uk/id/eprint/416175
ISSN: 0146-9592
PURE UUID: c9dd5290-1f7a-4abf-8cd3-c36411f7f78a
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Date deposited: 06 Dec 2017 17:30
Last modified: 16 Mar 2024 03:46
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Contributors
Author:
K. Koskinen
Author:
R. Czaplicki
Author:
A. Slablab
Author:
T. Ning
Author:
A. Hermans
Author:
B. Kuyken
Author:
V. Mittal
Author:
T. Niemi
Author:
R. Baets
Author:
M. Kauranen
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