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Anisotropic nanostructures directly written by fs pulses in wide-bandgap materials

Anisotropic nanostructures directly written by fs pulses in wide-bandgap materials
Anisotropic nanostructures directly written by fs pulses in wide-bandgap materials
The use of lasers to directly pattern optoelectronic devices primarily utilizes direct irradiation by UV light. We present here an alternative route using multi-photon absorption within a spherical focus in 3D space, thus allowing complex embedded structures to be directly written. In wide-bandgap materials such as chalcogenide, fluoride and silica glasses, our observations suggest free electrons are produced within the focus of a high-power infrared ultrashort pulse. The anisotropic interaction of this plasma with the incident pulse produces micron-sized DBR gratings of a 150nm pitch. An amplified Ti:S laser with 250kHz repetition rate, 150fs pulse duration, and wavelength tuned from 800-850nml is used to write embedded diffraction gratings and arrays of dots. The laser beam is focussed with a 50x objective into transparent polished samples, with pulse energies ranging from 0.1-1.1pJ (Fig.la). During the writing process broadband sub-bandgap UV light is emitted from a micron-sized spot at the sample focus. The written structures are permanent, typically with large refractive index changes on the order of Delta.n = +0.01 depending on the material.
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Mills, J.D.
3b139ebc-5875-4367-80e6-f7e94cf2d6a8
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Bricchi, E.
90e6f0e4-b25b-4b7e-8bb2-9d3c9f9f74b6
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Mills, J.D.
3b139ebc-5875-4367-80e6-f7e94cf2d6a8
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Bricchi, E.
90e6f0e4-b25b-4b7e-8bb2-9d3c9f9f74b6

Baumberg, J.J., Mills, J.D., Kazansky, P.G. and Bricchi, E. (2003) Anisotropic nanostructures directly written by fs pulses in wide-bandgap materials. 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7). 24 - 28 Feb 2003. 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

The use of lasers to directly pattern optoelectronic devices primarily utilizes direct irradiation by UV light. We present here an alternative route using multi-photon absorption within a spherical focus in 3D space, thus allowing complex embedded structures to be directly written. In wide-bandgap materials such as chalcogenide, fluoride and silica glasses, our observations suggest free electrons are produced within the focus of a high-power infrared ultrashort pulse. The anisotropic interaction of this plasma with the incident pulse produces micron-sized DBR gratings of a 150nm pitch. An amplified Ti:S laser with 250kHz repetition rate, 150fs pulse duration, and wavelength tuned from 800-850nml is used to write embedded diffraction gratings and arrays of dots. The laser beam is focussed with a 50x objective into transparent polished samples, with pulse energies ranging from 0.1-1.1pJ (Fig.la). During the writing process broadband sub-bandgap UV light is emitted from a micron-sized spot at the sample focus. The written structures are permanent, typically with large refractive index changes on the order of Delta.n = +0.01 depending on the material.

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Published date: 2003
Venue - Dates: 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7), 2003-02-24 - 2003-02-28

Identifiers

Local EPrints ID: 41629
URI: https://eprints.soton.ac.uk/id/eprint/41629
PURE UUID: 7756c1a8-7014-4cae-9232-4ea322143d3f

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Date deposited: 10 Oct 2006
Last modified: 17 Jul 2017 15:28

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