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The ferromagnetism in the vicinity of Lifshitz topological transitions

The ferromagnetism in the vicinity of Lifshitz topological transitions
The ferromagnetism in the vicinity of Lifshitz topological transitions
We show that the critical temperature of the ferromagnetic phase transition in a quasi-two-dimensional hole gas confined in a diluted magnetic semiconductor quantum well strongly depends on the hole chemical potential and hole density. Significant variations of the Curie temperature occur close to the Lifshitz topological transition points, where the hole Fermi surface acquires additional components of topological connectivity due to the filling of excited size-quantization subbands. The model calculations demonstrate that the Curie temperature can be doubled by a weak variation of the gate voltage for a CdMnTe/CdMgTe quantum-well-based device.
1550-235X
Grigoryev, P.S.
cab9f507-dec3-45ac-8370-04b19e003c6c
Glazov, M.M.
a014ed49-8ae2-4d25-91f4-94b79265a8ab
Kavokin, A.V.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Varlamov, A.A.
45a0f163-f9c9-425b-af0b-50be123c8564
Grigoryev, P.S.
cab9f507-dec3-45ac-8370-04b19e003c6c
Glazov, M.M.
a014ed49-8ae2-4d25-91f4-94b79265a8ab
Kavokin, A.V.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Varlamov, A.A.
45a0f163-f9c9-425b-af0b-50be123c8564

Grigoryev, P.S., Glazov, M.M., Kavokin, A.V. and Varlamov, A.A. (2017) The ferromagnetism in the vicinity of Lifshitz topological transitions. Physical Review B, 96 (20), [205415]. (doi:10.1103/PhysRevB.96.205415).

Record type: Article

Abstract

We show that the critical temperature of the ferromagnetic phase transition in a quasi-two-dimensional hole gas confined in a diluted magnetic semiconductor quantum well strongly depends on the hole chemical potential and hole density. Significant variations of the Curie temperature occur close to the Lifshitz topological transition points, where the hole Fermi surface acquires additional components of topological connectivity due to the filling of excited size-quantization subbands. The model calculations demonstrate that the Curie temperature can be doubled by a weak variation of the gate voltage for a CdMnTe/CdMgTe quantum-well-based device.

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The Ferromagnetism in the Vicinity of Lifshitz Topological Transitions - Accepted Manuscript
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Accepted/In Press date: 25 October 2017
e-pub ahead of print date: 9 November 2017
Published date: 15 November 2017

Identifiers

Local EPrints ID: 416329
URI: http://eprints.soton.ac.uk/id/eprint/416329
ISSN: 1550-235X
PURE UUID: 61e98492-1a0a-4201-af0b-ce65f93d8567

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Date deposited: 13 Dec 2017 17:30
Last modified: 15 Mar 2024 17:21

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Contributors

Author: P.S. Grigoryev
Author: M.M. Glazov
Author: A.V. Kavokin
Author: A.A. Varlamov

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