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Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy

Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy
Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy
The potential of MBE rare-earth-doped LaF3 thin films in the IR region has been previously reported by our group. Despite an unfavourable electron-phonon coupling which does not permit access to efficient transitions far above 3µm, LaF3 still offers the advantage of a very low phonon energy (~380 cm-1) and high transparency in the 2µm - 3µm range. Therefore it appears very attractive to fabricate a 2.8µm laser device based on this technology, with erbium as the doping ion, as the waveguide geometry should lead to a low-threshold, efficient, integrated device that operates continuously at room-temperature.

Several erbium-doped LaF3 thin films were grown on (111) oriented CaF2 substrates with core depths in the 2µm range, both with or without CaF2 claddings. The design with a cladding gives a high NA of 0.7 and offers single mode properties and good vertical confinement at 2.8µm as shown in figure 1. Three samples of 19 mm length, with respective concentrations of 1.08, 5.1 and 8.9 at. %, were grown by this method for investigation.
Chardon, A.M.
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Shepherd, David
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Camy, P.
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Doualan, J.L.
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Daran, E.
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Lacoste, G.
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Chardon, A.M.
0ed30ece-5a60-4ed1-a21b-38cb0da4fd6c
Shepherd, David
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Camy, P.
e9f468e8-1953-4f96-8f9d-ef69db1e9c1a
Doualan, J.L.
c001cca3-130c-4610-a28e-cc3da446d5d6
Daran, E.
85e99bdf-124c-4950-9660-5ad7d555c799
Lacoste, G.
e9aafb6b-bde6-4486-93aa-7eeb2896922b

Chardon, A.M., Shepherd, David, Camy, P., Doualan, J.L., Daran, E. and Lacoste, G. (2003) Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy. Conference on Lasers and Electro-Optics/Europe (CLEO/Europe-EQEC 2003), Munich, Germany. 22 - 26 Jun 2003. 1 pp . (doi:10.1109/CLEOE.2003.1313700).

Record type: Conference or Workshop Item (Paper)

Abstract

The potential of MBE rare-earth-doped LaF3 thin films in the IR region has been previously reported by our group. Despite an unfavourable electron-phonon coupling which does not permit access to efficient transitions far above 3µm, LaF3 still offers the advantage of a very low phonon energy (~380 cm-1) and high transparency in the 2µm - 3µm range. Therefore it appears very attractive to fabricate a 2.8µm laser device based on this technology, with erbium as the doping ion, as the waveguide geometry should lead to a low-threshold, efficient, integrated device that operates continuously at room-temperature.

Several erbium-doped LaF3 thin films were grown on (111) oriented CaF2 substrates with core depths in the 2µm range, both with or without CaF2 claddings. The design with a cladding gives a high NA of 0.7 and offers single mode properties and good vertical confinement at 2.8µm as shown in figure 1. Three samples of 19 mm length, with respective concentrations of 1.08, 5.1 and 8.9 at. %, were grown by this method for investigation.

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e-pub ahead of print date: 2003
Venue - Dates: Conference on Lasers and Electro-Optics/Europe (CLEO/Europe-EQEC 2003), Munich, Germany, 2003-06-22 - 2003-06-26

Identifiers

Local EPrints ID: 41661
URI: http://eprints.soton.ac.uk/id/eprint/41661
PURE UUID: 38d5a731-0b54-4911-a3df-359773c59a7e
ORCID for David Shepherd: ORCID iD orcid.org/0000-0002-4561-8184

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Date deposited: 12 Oct 2006
Last modified: 09 Jan 2022 02:38

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Contributors

Author: A.M. Chardon
Author: David Shepherd ORCID iD
Author: P. Camy
Author: J.L. Doualan
Author: E. Daran
Author: G. Lacoste

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