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Multibit memory operation of metal-oxide bi-layer memristors

Multibit memory operation of metal-oxide bi-layer memristors
Multibit memory operation of metal-oxide bi-layer memristors
Emerging nanoionic memristive devices are considered as the memory technology of the future and have been winning a great deal of attention due to their ability to perform fast and at the expense of low-power and -space requirements. Their full potential is envisioned that can be fulfilled through their capacity to store multiple memory states per cell, which however has been constrained so far by issues affecting the long-term stability of independent states. Here, we introduce and evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We propose a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. These states were found to correlate with the transport properties of the introduced barrier layers. We are demonstrating memory cells with up to 6.5 bits of information storage as well as excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.
2045-2322
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Valov, Ilia
0ae4be4c-8812-4062-be3f-10c6e01df089
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Valov, Ilia
0ae4be4c-8812-4062-be3f-10c6e01df089
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Stathopoulos, Spyros, Khiat, Ali, Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Valov, Ilia and Prodromakis, Themistoklis (2017) Multibit memory operation of metal-oxide bi-layer memristors. Scientific Reports, 7. (doi:10.1038/s41598-017-17785-1).

Record type: Article

Abstract

Emerging nanoionic memristive devices are considered as the memory technology of the future and have been winning a great deal of attention due to their ability to perform fast and at the expense of low-power and -space requirements. Their full potential is envisioned that can be fulfilled through their capacity to store multiple memory states per cell, which however has been constrained so far by issues affecting the long-term stability of independent states. Here, we introduce and evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We propose a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. These states were found to correlate with the transport properties of the introduced barrier layers. We are demonstrating memory cells with up to 6.5 bits of information storage as well as excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.

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More information

Accepted/In Press date: 30 November 2017
e-pub ahead of print date: 13 December 2017

Identifiers

Local EPrints ID: 416683
URI: https://eprints.soton.ac.uk/id/eprint/416683
ISSN: 2045-2322
PURE UUID: 76d83ba7-1747-4d66-84b3-fa5b34313fca
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 04 Jan 2018 17:30
Last modified: 10 Dec 2019 05:40

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