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Tin(IV) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

Tin(IV) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films
Tin(IV) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films
The molecular Sn(IV) complexes, [SnCl4{nBuS(CH2)3SnBu}] (2), [SnCl4(nBu2S)2] (3) and [SnCl4(nBu2Se)2] (4) have been prepared in good yield from reaction of SnCl4 with the appropriate chalcogenoether ligand in anhydrous hexane and, together with the known [SnCl4{nBuSe(CH2)3SenBu}] (1), employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenide thin films. At elevated temperatures the bidentate ligand precursors, (1) and (2), also form the tin monochalcogenides, SnSe and SnS, respectively. In contrast, (3) gave a mixture of phases, SnS2, Sn2S3 and SnS and (4) gave SnSe2 only. The morphologies, elemental compositions and crystal structures of the resulting films have been determined by scanning electron microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction and Raman spectroscopy. Van der Pauw measurements on the SnS2, SnS and SnSe2 films confirm their resistivities to be 2.9(9), 266(3) and 4.4(3) Ω∙cm, respectively.
0300-9246
2628-2637
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hawken, Samantha, Louise
1f5bc11f-bcef-436b-b4bf-065b41a9a09f
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jura, Marek
d145b3fa-eec4-47d8-b47c-61a2b616bc8f
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Perkins, James
38bb8d44-c32b-416d-873d-80815350220e
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Stenning, Gavin
1b8ebbf6-4d05-484d-90b3-7d9a76bee911
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hawken, Samantha, Louise
1f5bc11f-bcef-436b-b4bf-065b41a9a09f
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jura, Marek
d145b3fa-eec4-47d8-b47c-61a2b616bc8f
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Perkins, James
38bb8d44-c32b-416d-873d-80815350220e
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Stenning, Gavin
1b8ebbf6-4d05-484d-90b3-7d9a76bee911

Gurnani, Chitra, Hawken, Samantha, Louise, Hector, Andrew L., Huang, Ruomeng, Jura, Marek, Levason, William, Perkins, James, Reid, Gillian and Stenning, Gavin (2018) Tin(IV) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films. Dalton Transactions, 47 (8), 2628-2637. (doi:10.1039/C7DT03848H).

Record type: Article

Abstract

The molecular Sn(IV) complexes, [SnCl4{nBuS(CH2)3SnBu}] (2), [SnCl4(nBu2S)2] (3) and [SnCl4(nBu2Se)2] (4) have been prepared in good yield from reaction of SnCl4 with the appropriate chalcogenoether ligand in anhydrous hexane and, together with the known [SnCl4{nBuSe(CH2)3SenBu}] (1), employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenide thin films. At elevated temperatures the bidentate ligand precursors, (1) and (2), also form the tin monochalcogenides, SnSe and SnS, respectively. In contrast, (3) gave a mixture of phases, SnS2, Sn2S3 and SnS and (4) gave SnSe2 only. The morphologies, elemental compositions and crystal structures of the resulting films have been determined by scanning electron microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction and Raman spectroscopy. Van der Pauw measurements on the SnS2, SnS and SnSe2 films confirm their resistivities to be 2.9(9), 266(3) and 4.4(3) Ω∙cm, respectively.

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SnE_E2_final revised 02-11-17 - Accepted Manuscript
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Accepted/In Press date: 2 November 2017
e-pub ahead of print date: 2 February 2018
Published date: 2018

Identifiers

Local EPrints ID: 416788
URI: http://eprints.soton.ac.uk/id/eprint/416788
ISSN: 0300-9246
PURE UUID: 21ab6aab-f663-4c78-afda-ffec9a42ae53
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 10 Jan 2018 17:30
Last modified: 15 Sep 2021 04:43

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Contributors

Author: Chitra Gurnani
Author: Samantha, Louise Hawken
Author: Ruomeng Huang
Author: Marek Jura
Author: William Levason ORCID iD
Author: James Perkins
Author: Gillian Reid ORCID iD
Author: Gavin Stenning

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