Properties of SiC resistive memory for harsh environments
Properties of SiC resistive memory for harsh environments
Amorphous silicon carbide resistive memory cells are shown to exhibit the highest ROFF/RON ratio recorded for any resistive memory in pulsed switching. The switching characteristics are investigated and fitted to a numerical model. The SET mechanism for these cells is found to be due to ionic motion without joule heating contributions, leading to large VSET. The high thermal conductivity and resistivity of the SiC memory cells result in slow switching but, with high state and thermal stability, show potential for harsh environment use. Radiation properties of SiC memory cells are investigated. No change was seen in switching properties nor in conductive mechanism, up to 2Mrad(Si) using 60Co ionizing gamma radiation.
silicon carbide, radiation, resistive memory
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
September 2015
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Morgan, Katrina, Fan, Junqing, Huang, Ruomeng, Zhong, Le, Gowers, Robert, Jiang, Liudi and De Groot, Cornelis
(2015)
Properties of SiC resistive memory for harsh environments.
International Conference on Solid-State Devices and Materials (SSDM 2015), Sapporo, Japan.
27 - 29 Sep 2015.
2 pp
.
Record type:
Conference or Workshop Item
(Poster)
Abstract
Amorphous silicon carbide resistive memory cells are shown to exhibit the highest ROFF/RON ratio recorded for any resistive memory in pulsed switching. The switching characteristics are investigated and fitted to a numerical model. The SET mechanism for these cells is found to be due to ionic motion without joule heating contributions, leading to large VSET. The high thermal conductivity and resistivity of the SiC memory cells result in slow switching but, with high state and thermal stability, show potential for harsh environment use. Radiation properties of SiC memory cells are investigated. No change was seen in switching properties nor in conductive mechanism, up to 2Mrad(Si) using 60Co ionizing gamma radiation.
Text
PS_4_9
- Author's Original
Slideshow
SSDM_poster (1)
- Author's Original
More information
Published date: September 2015
Venue - Dates:
International Conference on Solid-State Devices and Materials (SSDM 2015), Sapporo, Japan, 2015-09-27 - 2015-09-29
Keywords:
silicon carbide, radiation, resistive memory
Identifiers
Local EPrints ID: 417060
URI: http://eprints.soton.ac.uk/id/eprint/417060
PURE UUID: f59203ec-5b1a-4384-8b7e-ecd2e1eba43a
Catalogue record
Date deposited: 18 Jan 2018 17:30
Last modified: 16 Mar 2024 04:10
Export record
Contributors
Author:
Katrina Morgan
Author:
Junqing Fan
Author:
Ruomeng Huang
Author:
Le Zhong
Author:
Robert Gowers
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics