Total dose hardness of TiN/HfOx/TiN resistive random access memory devices

Morgan, Katrina, Huang, Ruomeng, Potter, K, Shaw, Chris, Redman-White, William and De Groot, Cornelis (2014) Total dose hardness of TiN/HfOx/TiN resistive random access memory devices. IEEE Nuclear & Space Radiation Effects Conference, Marriott Rive Gauche, Paris, France. 14 - 18 Jul 2014. 4 pp .

Record type: Conference or Workshop Item (Poster)

Abstract

Resistive random access memory based on TiN/HfOx/TiN has been fabricated. Sweep and pulsed electrical characteristics were extracted before and after Co60 gamma irradiation. All devices were shown to be radiation hard up to 10Mrad(Si).

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Published date: July 2014

Venue - Dates: IEEE Nuclear & Space Radiation Effects Conference, Marriott Rive Gauche, Paris, France, 2014-07-14 - 2014-07-18

Keywords: rram, radiation, Total Ionizing Dose, hafnium oxide

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Identifiers

Local EPrints ID: 417112

URI: http://eprints.soton.ac.uk/id/eprint/417112

PURE UUID: d5ebc7f8-eab8-4951-9e23-29e4e63d126e

ORCID for Katrina Morgan:

orcid.org/0000-0002-8600-4322

ORCID for Ruomeng Huang:

orcid.org/0000-0003-1185-635X

ORCID for Cornelis De Groot:

orcid.org/0000-0002-3850-7101

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Date deposited: 19 Jan 2018 17:30

Last modified: 14 Mar 2024 02:58

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Contributors

Author: Katrina Morgan

Author: Ruomeng Huang

Author: K Potter

Author: Chris Shaw

Author: William Redman-White

Author: Cornelis De Groot

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