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Transition metal doped chalcogenide glasses for broadband near-infrared sources

Transition metal doped chalcogenide glasses for broadband near-infrared sources
Transition metal doped chalcogenide glasses for broadband near-infrared sources
The use of rare-earth ion dopants to obtain near-infrared (NIR) emission and lasing in glass fibres and waveguides is well known. However, due to the intrinsic nature of the spin-forbidden 4f-4f transitions the emission is generally only tuneable over a narrow spectral range (~50nm). The development of a broadband NIR source or tuneable laser would have applications in telecommunications, sensing amongst others. The ability to do this in a non-linear material would have additional benefits including the possibility of developing integrated devices. To this end we have investigated the incorporation of various transition metal dopants into Ga:La:S glass system (GLS). We have identified a number of transition metal ions that show potential for developing broadband source and in particular V. When V is incorporated into GLS strong room temperature emission is observed peaking at ~1550nm with what appears to be some dependence of the emission upon excitation at wavelength. The room temperature lifetime of the emission shows a non-exponential decay with a 1/e time of 31µs. The incorporation of Cr into GLS during the glass melting results in the formation of Cr ions that act as emitting centres. Again there appears to be some dependence on excitation wavelength of the emission which is ~1100nm when exciting at 800nm. The emission is also seen to shift upon cooling of the sample to 77K to longer wavelengths.
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Mairaj, A.
c05fb028-c25d-445a-90d2-2085e8a4fe76
Hughes, M.
3544b2a0-06e1-4060-beb5-57543a230a03
Aronson, J.E.
5582d425-da71-4727-818b-d24f8aeb4e27
Brocklesby, William
c53ca2f6-db65-4e19-ad00-eebeb2e6de67
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Mairaj, A.
c05fb028-c25d-445a-90d2-2085e8a4fe76
Hughes, M.
3544b2a0-06e1-4060-beb5-57543a230a03
Aronson, J.E.
5582d425-da71-4727-818b-d24f8aeb4e27
Brocklesby, William
c53ca2f6-db65-4e19-ad00-eebeb2e6de67
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Curry, R.J., Mairaj, A., Hughes, M., Aronson, J.E., Brocklesby, William and Hewak, D.W. (2004) Transition metal doped chalcogenide glasses for broadband near-infrared sources. SPIE European Symposium on Optics and Photonics for Defence & Security, London, UK, 25-28 Oct 2004. 25 - 28 Oct 2004. 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

The use of rare-earth ion dopants to obtain near-infrared (NIR) emission and lasing in glass fibres and waveguides is well known. However, due to the intrinsic nature of the spin-forbidden 4f-4f transitions the emission is generally only tuneable over a narrow spectral range (~50nm). The development of a broadband NIR source or tuneable laser would have applications in telecommunications, sensing amongst others. The ability to do this in a non-linear material would have additional benefits including the possibility of developing integrated devices. To this end we have investigated the incorporation of various transition metal dopants into Ga:La:S glass system (GLS). We have identified a number of transition metal ions that show potential for developing broadband source and in particular V. When V is incorporated into GLS strong room temperature emission is observed peaking at ~1550nm with what appears to be some dependence of the emission upon excitation at wavelength. The room temperature lifetime of the emission shows a non-exponential decay with a 1/e time of 31µs. The incorporation of Cr into GLS during the glass melting results in the formation of Cr ions that act as emitting centres. Again there appears to be some dependence on excitation wavelength of the emission which is ~1100nm when exciting at 800nm. The emission is also seen to shift upon cooling of the sample to 77K to longer wavelengths.

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e-pub ahead of print date: 2004
Venue - Dates: SPIE European Symposium on Optics and Photonics for Defence & Security, London, UK, 25-28 Oct 2004, 2004-10-25 - 2004-10-28

Identifiers

Local EPrints ID: 41717
URI: https://eprints.soton.ac.uk/id/eprint/41717
PURE UUID: 34752c95-2544-48cb-bb4f-5d894cccb898
ORCID for William Brocklesby: ORCID iD orcid.org/0000-0002-2123-6712
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 16 Oct 2006
Last modified: 06 Jun 2018 13:12

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Contributors

Author: R.J. Curry
Author: A. Mairaj
Author: M. Hughes
Author: J.E. Aronson
Author: D.W. Hewak ORCID iD

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