N-rich silicon nitride angled-MMI for coarse wavelength division (de)multiplexing in the O-band
N-rich silicon nitride angled-MMI for coarse wavelength division (de)multiplexing in the O-band
We report the design and fabrication of a compact angled
multimode interferometer (AMMI) on a 600nm
thick N-rich silicon nitride platform (n=1.92) optimised
to match the International Telecommunication Union
(ITU) coarse wavelength division (de)multiplexing
(CWDM) standard in the O telecommunication band.
The demonstrated device exhibited a good spectral response
with ∆λ=20nm, BW3dB ∼11nm, IL<1.5dB and
XT∼20dB. Additionally, it showed a high tolerance to
dimensional errors <120pm/nm and low sensitivity to
temperature variations <20pm/◦C, respectively. This device
had a fooprint of 0.02x1.7mm2 with the advantage
of a simple design and a back-end-of-line compatible
fabrication process that enables multilayer integration
schemes due to its processing temperature <400◦C
1251-1254
Dominguez Bucio, Thalia
b8b4e121-f09f-4ae0-8550-47bf2fd49da1
Khokhar, Ali Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
7 March 2018
Dominguez Bucio, Thalia
b8b4e121-f09f-4ae0-8550-47bf2fd49da1
Khokhar, Ali Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Dominguez Bucio, Thalia, Khokhar, Ali Z., Mashanovich, Goran Z. and Gardes, Frederic Y.
(2018)
N-rich silicon nitride angled-MMI for coarse wavelength division (de)multiplexing in the O-band.
Optics Letters, 43 (5), .
(doi:10.1364/OL.43.001251).
Abstract
We report the design and fabrication of a compact angled
multimode interferometer (AMMI) on a 600nm
thick N-rich silicon nitride platform (n=1.92) optimised
to match the International Telecommunication Union
(ITU) coarse wavelength division (de)multiplexing
(CWDM) standard in the O telecommunication band.
The demonstrated device exhibited a good spectral response
with ∆λ=20nm, BW3dB ∼11nm, IL<1.5dB and
XT∼20dB. Additionally, it showed a high tolerance to
dimensional errors <120pm/nm and low sensitivity to
temperature variations <20pm/◦C, respectively. This device
had a fooprint of 0.02x1.7mm2 with the advantage
of a simple design and a back-end-of-line compatible
fabrication process that enables multilayer integration
schemes due to its processing temperature <400◦C
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More information
Accepted/In Press date: 20 January 2018
e-pub ahead of print date: 22 January 2018
Published date: 7 March 2018
Identifiers
Local EPrints ID: 417230
URI: https://eprints.soton.ac.uk/id/eprint/417230
ISSN: 0146-9592
PURE UUID: c085b68c-eaf0-402d-a773-6c7c29aa976b
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Date deposited: 26 Jan 2018 17:30
Last modified: 22 Apr 2018 04:01
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Contributors
Author:
Thalia Dominguez Bucio
Author:
Ali Z. Khokhar
University divisions
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