N-rich silicon nitride angled-MMI for coarse wavelength division (de)multiplexing in the O-band
N-rich silicon nitride angled-MMI for coarse wavelength division (de)multiplexing in the O-band
We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600nm thick N-rich silicon nitride platform (n=1.92) optimised to match the International Telecommunication Union (ITU) coarse wavelength division (de)multiplexing (CWDM) standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with ∆λ=20nm, BW3dB ∼11nm, IL<1.5dB and XT∼20dB. Additionally, it showed a high tolerance to dimensional errors <120pm/nm and low sensitivity to temperature variations <20pm/ºC, respectively. This device had a footprint of 0.02×1.7mm2 with the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature <400ºC.
1251-1254
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Khokhar, Ali Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
7 March 2018
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Khokhar, Ali Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalía, Khokhar, Ali Z., Mashanovich, Goran Z. and Gardes, Frederic Y.
(2018)
N-rich silicon nitride angled-MMI for coarse wavelength division (de)multiplexing in the O-band.
Optics Letters, 43 (5), .
(doi:10.1364/OL.43.001251).
Abstract
We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600nm thick N-rich silicon nitride platform (n=1.92) optimised to match the International Telecommunication Union (ITU) coarse wavelength division (de)multiplexing (CWDM) standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with ∆λ=20nm, BW3dB ∼11nm, IL<1.5dB and XT∼20dB. Additionally, it showed a high tolerance to dimensional errors <120pm/nm and low sensitivity to temperature variations <20pm/ºC, respectively. This device had a footprint of 0.02×1.7mm2 with the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature <400ºC.
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Accepted/In Press date: 20 January 2018
e-pub ahead of print date: 22 January 2018
Published date: 7 March 2018
Identifiers
Local EPrints ID: 417230
URI: http://eprints.soton.ac.uk/id/eprint/417230
ISSN: 0146-9592
PURE UUID: c085b68c-eaf0-402d-a773-6c7c29aa976b
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Date deposited: 26 Jan 2018 17:30
Last modified: 10 Jan 2022 05:58
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Author:
Ali Z. Khokhar
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