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Random telegraph noise from resonant tunnelling at low temperatures

Random telegraph noise from resonant tunnelling at low temperatures
Random telegraph noise from resonant tunnelling at low temperatures
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is consideredto be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that theRTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.
2045-2322
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad Khaled
db4ddb10-f59b-4965-8d0e-08a62f9ac0a6
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad Khaled
db4ddb10-f59b-4965-8d0e-08a62f9ac0a6
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Li, Zuo, Sotto, Moise, Sala Henri, Liu, Fayong, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Hisamoto, Digh, Tomita, Isao, Tsuchiya, Yoshishige and Saito, Shinichi (2018) Random telegraph noise from resonant tunnelling at low temperatures. Scientific Reports, 8. (doi:10.1038/s41598-017-18579-1).

Record type: Article

Abstract

The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is consideredto be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that theRTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.

Text Manuscript_NE_Zuo - Accepted Manuscript
Available under License Creative Commons Attribution.
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More information

Accepted/In Press date: 13 December 2017
e-pub ahead of print date: 10 January 2018

Identifiers

Local EPrints ID: 417394
URI: https://eprints.soton.ac.uk/id/eprint/417394
ISSN: 2045-2322
PURE UUID: 2660f4b8-fd7d-4e98-a3a5-21cc16b86c34
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 30 Jan 2018 17:31
Last modified: 06 Jun 2018 12:28

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