Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)
Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)
The authors report an innovative design of wide spectrum detector that can detect visible and mid-infrared spectrum, from 0.4 to 5 μm, simultaneously. The detector is designed with microstructure of various types of photon traps fabricated on mid-infrared InAs/GaSb type-II superlattice materials. Quantum efficiency has been significantly improved due to the action of photon traps which can decrease the reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice down to less than 5%. Under the condition of 77 K and 200 mV bias voltage, the responsivity of the detector is about 0.025–0.45 A/W in the visible wavelength regime of 400–790 nm, more than 0.3 A/W in spectrum of 800–2000 nm, respectively. Through the optimized photon trap structure, the responsivity of detector is to 1.25 A/W and predominantly improve the quantum efficiency of the detector up to 52.5% at 3 μm.
InAs/GaSb type-Ⅱ superlattice, Microstructure, Photon traps, Wide spectrum detector
147-153
Guo, Chunyan
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Sun, Yaoyao
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Jia, Zhe
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Jiang, Zhi
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Lv, Yuexi
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Hao, Hongyue
ab2383fb-24ca-4acb-9485-277ef34cc374
Han, Xi
9230ba1b-e1d8-41f0-bf73-1001ec49da39
Dong, Yinan
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Jiang, Dongwei
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Wang, Guowei
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Xu, Yingqiang
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Wang, Tao
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Tian, Jinshou
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Wu, Zhaoxin
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Niu, Zhichuan
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1 March 2018
Guo, Chunyan
17fcdca3-bf56-4647-b178-8ace3e12e509
Sun, Yaoyao
9e1581c9-e558-4024-ba1b-bb21f9fb2516
Jia, Zhe
1a6cd0c6-662b-4e32-8f0b-a272a6d31ff6
Jiang, Zhi
1e697899-c525-4791-904d-dac24ddce4fd
Lv, Yuexi
fd24def7-013c-45cd-8b1f-10678cf5f10f
Hao, Hongyue
ab2383fb-24ca-4acb-9485-277ef34cc374
Han, Xi
9230ba1b-e1d8-41f0-bf73-1001ec49da39
Dong, Yinan
bcb63ddb-e0e8-4250-a8ac-ed556aa16740
Jiang, Dongwei
2fe1cf3d-a044-436d-bec7-6acfcdbbacb7
Wang, Guowei
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Xu, Yingqiang
40173e9b-6a92-4c9b-9a9f-4cd39c9af0fd
Wang, Tao
e819197b-0675-41d6-ad95-4b523f42e52f
Tian, Jinshou
fe9ca2d6-e5c5-403b-b42f-fedae2b49a2a
Wu, Zhaoxin
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Niu, Zhichuan
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Guo, Chunyan, Sun, Yaoyao, Jia, Zhe, Jiang, Zhi, Lv, Yuexi, Hao, Hongyue, Han, Xi, Dong, Yinan, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin and Niu, Zhichuan
(2018)
Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL).
Infrared Physics and Technology, 89, .
(doi:10.1016/j.infrared.2017.12.020).
Abstract
The authors report an innovative design of wide spectrum detector that can detect visible and mid-infrared spectrum, from 0.4 to 5 μm, simultaneously. The detector is designed with microstructure of various types of photon traps fabricated on mid-infrared InAs/GaSb type-II superlattice materials. Quantum efficiency has been significantly improved due to the action of photon traps which can decrease the reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice down to less than 5%. Under the condition of 77 K and 200 mV bias voltage, the responsivity of the detector is about 0.025–0.45 A/W in the visible wavelength regime of 400–790 nm, more than 0.3 A/W in spectrum of 800–2000 nm, respectively. Through the optimized photon trap structure, the responsivity of detector is to 1.25 A/W and predominantly improve the quantum efficiency of the detector up to 52.5% at 3 μm.
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More information
Accepted/In Press date: 30 December 2017
e-pub ahead of print date: 30 December 2017
Published date: 1 March 2018
Keywords:
InAs/GaSb type-Ⅱ superlattice, Microstructure, Photon traps, Wide spectrum detector
Identifiers
Local EPrints ID: 417458
URI: http://eprints.soton.ac.uk/id/eprint/417458
ISSN: 1350-4495
PURE UUID: a1cc88ad-6e17-4925-86b7-4663058e541b
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Date deposited: 31 Jan 2018 17:30
Last modified: 15 Mar 2024 18:09
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Contributors
Author:
Chunyan Guo
Author:
Yaoyao Sun
Author:
Zhe Jia
Author:
Zhi Jiang
Author:
Yuexi Lv
Author:
Hongyue Hao
Author:
Xi Han
Author:
Yinan Dong
Author:
Dongwei Jiang
Author:
Guowei Wang
Author:
Yingqiang Xu
Author:
Tao Wang
Author:
Jinshou Tian
Author:
Zhaoxin Wu
Author:
Zhichuan Niu
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