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Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)

Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)
Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)

The authors report an innovative design of wide spectrum detector that can detect visible and mid-infrared spectrum, from 0.4 to 5 μm, simultaneously. The detector is designed with microstructure of various types of photon traps fabricated on mid-infrared InAs/GaSb type-II superlattice materials. Quantum efficiency has been significantly improved due to the action of photon traps which can decrease the reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice down to less than 5%. Under the condition of 77 K and 200 mV bias voltage, the responsivity of the detector is about 0.025–0.45 A/W in the visible wavelength regime of 400–790 nm, more than 0.3 A/W in spectrum of 800–2000 nm, respectively. Through the optimized photon trap structure, the responsivity of detector is to 1.25 A/W and predominantly improve the quantum efficiency of the detector up to 52.5% at 3 μm.

InAs/GaSb type-Ⅱ superlattice, Microstructure, Photon traps, Wide spectrum detector
1350-4495
147-153
Guo, Chunyan
17fcdca3-bf56-4647-b178-8ace3e12e509
Sun, Yaoyao
9e1581c9-e558-4024-ba1b-bb21f9fb2516
Jia, Zhe
1a6cd0c6-662b-4e32-8f0b-a272a6d31ff6
Jiang, Zhi
1e697899-c525-4791-904d-dac24ddce4fd
Lv, Yuexi
fd24def7-013c-45cd-8b1f-10678cf5f10f
Hao, Hongyue
ab2383fb-24ca-4acb-9485-277ef34cc374
Han, Xi
9230ba1b-e1d8-41f0-bf73-1001ec49da39
Dong, Yinan
bcb63ddb-e0e8-4250-a8ac-ed556aa16740
Jiang, Dongwei
2fe1cf3d-a044-436d-bec7-6acfcdbbacb7
Wang, Guowei
a7a1e889-a2d0-4608-92d7-7f4a818540f3
Xu, Yingqiang
40173e9b-6a92-4c9b-9a9f-4cd39c9af0fd
Wang, Tao
e819197b-0675-41d6-ad95-4b523f42e52f
Tian, Jinshou
fe9ca2d6-e5c5-403b-b42f-fedae2b49a2a
Wu, Zhaoxin
3052c91e-4540-4594-8490-09e6a9dadd9d
Niu, Zhichuan
2ba9d03f-a844-4fbf-9004-d5e31d54bbf2
Guo, Chunyan
17fcdca3-bf56-4647-b178-8ace3e12e509
Sun, Yaoyao
9e1581c9-e558-4024-ba1b-bb21f9fb2516
Jia, Zhe
1a6cd0c6-662b-4e32-8f0b-a272a6d31ff6
Jiang, Zhi
1e697899-c525-4791-904d-dac24ddce4fd
Lv, Yuexi
fd24def7-013c-45cd-8b1f-10678cf5f10f
Hao, Hongyue
ab2383fb-24ca-4acb-9485-277ef34cc374
Han, Xi
9230ba1b-e1d8-41f0-bf73-1001ec49da39
Dong, Yinan
bcb63ddb-e0e8-4250-a8ac-ed556aa16740
Jiang, Dongwei
2fe1cf3d-a044-436d-bec7-6acfcdbbacb7
Wang, Guowei
a7a1e889-a2d0-4608-92d7-7f4a818540f3
Xu, Yingqiang
40173e9b-6a92-4c9b-9a9f-4cd39c9af0fd
Wang, Tao
e819197b-0675-41d6-ad95-4b523f42e52f
Tian, Jinshou
fe9ca2d6-e5c5-403b-b42f-fedae2b49a2a
Wu, Zhaoxin
3052c91e-4540-4594-8490-09e6a9dadd9d
Niu, Zhichuan
2ba9d03f-a844-4fbf-9004-d5e31d54bbf2

Guo, Chunyan, Sun, Yaoyao, Jia, Zhe, Jiang, Zhi, Lv, Yuexi, Hao, Hongyue, Han, Xi, Dong, Yinan, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin and Niu, Zhichuan (2018) Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL). Infrared Physics and Technology, 89, 147-153. (doi:10.1016/j.infrared.2017.12.020).

Record type: Article

Abstract

The authors report an innovative design of wide spectrum detector that can detect visible and mid-infrared spectrum, from 0.4 to 5 μm, simultaneously. The detector is designed with microstructure of various types of photon traps fabricated on mid-infrared InAs/GaSb type-II superlattice materials. Quantum efficiency has been significantly improved due to the action of photon traps which can decrease the reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice down to less than 5%. Under the condition of 77 K and 200 mV bias voltage, the responsivity of the detector is about 0.025–0.45 A/W in the visible wavelength regime of 400–790 nm, more than 0.3 A/W in spectrum of 800–2000 nm, respectively. Through the optimized photon trap structure, the responsivity of detector is to 1.25 A/W and predominantly improve the quantum efficiency of the detector up to 52.5% at 3 μm.

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More information

Accepted/In Press date: 30 December 2017
e-pub ahead of print date: 30 December 2017
Published date: 1 March 2018
Keywords: InAs/GaSb type-Ⅱ superlattice, Microstructure, Photon traps, Wide spectrum detector

Identifiers

Local EPrints ID: 417458
URI: https://eprints.soton.ac.uk/id/eprint/417458
ISSN: 1350-4495
PURE UUID: a1cc88ad-6e17-4925-86b7-4663058e541b

Catalogue record

Date deposited: 31 Jan 2018 17:30
Last modified: 23 Apr 2018 16:30

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Contributors

Author: Chunyan Guo
Author: Yaoyao Sun
Author: Zhe Jia
Author: Zhi Jiang
Author: Yuexi Lv
Author: Hongyue Hao
Author: Xi Han
Author: Yinan Dong
Author: Dongwei Jiang
Author: Guowei Wang
Author: Yingqiang Xu
Author: Tao Wang
Author: Jinshou Tian
Author: Zhaoxin Wu
Author: Zhichuan Niu

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