Characteristic resonance features of SOI-CMOS-compatible silicon nanoelectromechanical doubly-clamped beams up to 330 MHz
Characteristic resonance features of SOI-CMOS-compatible silicon nanoelectromechanical doubly-clamped beams up to 330 MHz
This paper reports novel characteristic features of thermally-passivated Si nanoelectromechanical (NEM) beams fabricated via SOI-CMOS compatible processes with top-down hybrid EB/DUV lithography. Considerable difference of the resonance frequencies between the measurement results of the NEM beams with various lengths and the finite element simulation results suggests that effects of the undercut of the beam supports are serious for sub-micron beams. The resonance frequency of 332.57 MHz observed for an 800-nm-long beam is, to our knowledge, the highest ever as the fundamental resonance mode of lithographically-defined Si NEM beams. Clear change of the temperature dependence of the resonance frequencies with the varied beam lengths, observed for the first time, can be explained by considering effects of thermally-induced strain on the longer beams at higher temperatures.
515-518
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Feng, Yilin
b30fe255-6615-40dc-8e76-d5092312f638
Giotis, Christos
07cf64f0-001d-42a2-a226-a468dcb7f0e3
Harada, Naoaki
0bf88830-2a7d-4796-99db-10eec6d96c55
Shikida, Mitsuhiro
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Dupré, Cécilia
87ef38a0-96df-4613-9875-8facf55d7102
Ollier, Eric
9bb3a51a-1328-492d-b5d9-5c2829160327
Arab Hassani, Faezeh
489be2da-4cc2-40fd-8c1a-77d7fa7333a2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
26 April 2018
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Feng, Yilin
b30fe255-6615-40dc-8e76-d5092312f638
Giotis, Christos
07cf64f0-001d-42a2-a226-a468dcb7f0e3
Harada, Naoaki
0bf88830-2a7d-4796-99db-10eec6d96c55
Shikida, Mitsuhiro
8aa74b77-860c-4662-88c3-2112535f116b
Dupré, Cécilia
87ef38a0-96df-4613-9875-8facf55d7102
Ollier, Eric
9bb3a51a-1328-492d-b5d9-5c2829160327
Arab Hassani, Faezeh
489be2da-4cc2-40fd-8c1a-77d7fa7333a2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Tsuchiya, Yoshishige, Feng, Yilin, Giotis, Christos, Harada, Naoaki, Shikida, Mitsuhiro, Dupré, Cécilia, Ollier, Eric, Arab Hassani, Faezeh and Mizuta, Hiroshi
(2018)
Characteristic resonance features of SOI-CMOS-compatible silicon nanoelectromechanical doubly-clamped beams up to 330 MHz.
In 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018.
vol. 2018-January,
IEEE.
.
(doi:10.1109/MEMSYS.2018.8346603).
Record type:
Conference or Workshop Item
(Paper)
Abstract
This paper reports novel characteristic features of thermally-passivated Si nanoelectromechanical (NEM) beams fabricated via SOI-CMOS compatible processes with top-down hybrid EB/DUV lithography. Considerable difference of the resonance frequencies between the measurement results of the NEM beams with various lengths and the finite element simulation results suggests that effects of the undercut of the beam supports are serious for sub-micron beams. The resonance frequency of 332.57 MHz observed for an 800-nm-long beam is, to our knowledge, the highest ever as the fundamental resonance mode of lithographically-defined Si NEM beams. Clear change of the temperature dependence of the resonance frequencies with the varied beam lengths, observed for the first time, can be explained by considering effects of thermally-induced strain on the longer beams at higher temperatures.
Text
MEMS18Paper_YoshiTsuchiya_Final
- Accepted Manuscript
More information
Accepted/In Press date: 22 November 2017
e-pub ahead of print date: 21 January 2018
Published date: 26 April 2018
Venue - Dates:
Micro Electro Mechanical Systems, Belfast Waterfront, Belfast, United Kingdom, 2018-01-21 - 2018-01-25
Identifiers
Local EPrints ID: 417879
URI: http://eprints.soton.ac.uk/id/eprint/417879
PURE UUID: 0fda9ba6-63ca-4880-b758-bf3872ad8e70
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Date deposited: 16 Feb 2018 17:30
Last modified: 15 Mar 2024 20:10
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Contributors
Author:
Yoshishige Tsuchiya
Author:
Yilin Feng
Author:
Christos Giotis
Author:
Naoaki Harada
Author:
Mitsuhiro Shikida
Author:
Cécilia Dupré
Author:
Eric Ollier
Author:
Faezeh Arab Hassani
Author:
Hiroshi Mizuta
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