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Ion implantation in silicon for trimming the operating wavelength of ring resonators

Ion implantation in silicon for trimming the operating wavelength of ring resonators
Ion implantation in silicon for trimming the operating wavelength of ring resonators
In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to control the operating wavelength of ring resonators, which is very sensitive to fabrication imperfections. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. In this paper we discuss design, modelling and fabrication of ring resonators and their subsequent trimming using ion implantation of germanium into silicon, followed by either rapid thermal annealing or localized laser annealing. The results confirm the ability permanently tune the position of the resonant wavelength to any point inside the free spectral range of the ring resonator, thus greatly reducing the amount of power required for active tuning of these devices.
Fabrication, Ion implantation, Ions, Optical ring resonators, Optical waveguides, Refractive index, Silicon, laser annealing, optical interconnects, rapid thermal annealing, ring resonators, silicon photonics, trimming
1077-260X
1-7
Milošević, M.M.
b28da945-84a5-4317-8896-6d9ea6a69589
Chen, X.
64f6ab92-ca11-4489-8c03-52bc986209ae
Cao, W.
6194b5dd-d4e9-40d0-b5fb-b264d72fe594
Runge, A.F.J.
874cec37-209b-4c7a-97a5-56d05596dd2b
Franz, Y.
edb6208c-9f65-42c4-965e-b6bc54945602
Littlejohns, C.G.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Mailis, S.
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Peacock, A.C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Milošević, M.M.
b28da945-84a5-4317-8896-6d9ea6a69589
Chen, X.
64f6ab92-ca11-4489-8c03-52bc986209ae
Cao, W.
6194b5dd-d4e9-40d0-b5fb-b264d72fe594
Runge, A.F.J.
874cec37-209b-4c7a-97a5-56d05596dd2b
Franz, Y.
edb6208c-9f65-42c4-965e-b6bc54945602
Littlejohns, C.G.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Mailis, S.
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Peacock, A.C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139

Milošević, M.M., Chen, X., Cao, W., Runge, A.F.J., Franz, Y., Littlejohns, C.G., Mailis, S., Peacock, A.C., Thomson, D.J. and Reed, G.T. (2018) Ion implantation in silicon for trimming the operating wavelength of ring resonators. IEEE Journal of Selected Topics in Quantum Electronics, 24 (4), 1-7. (doi:10.1109/JSTQE.2018.2799660).

Record type: Article

Abstract

In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to control the operating wavelength of ring resonators, which is very sensitive to fabrication imperfections. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. In this paper we discuss design, modelling and fabrication of ring resonators and their subsequent trimming using ion implantation of germanium into silicon, followed by either rapid thermal annealing or localized laser annealing. The results confirm the ability permanently tune the position of the resonant wavelength to any point inside the free spectral range of the ring resonator, thus greatly reducing the amount of power required for active tuning of these devices.

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Accepted/In Press date: 24 January 2018
e-pub ahead of print date: 31 January 2018
Published date: 2018
Keywords: Fabrication, Ion implantation, Ions, Optical ring resonators, Optical waveguides, Refractive index, Silicon, laser annealing, optical interconnects, rapid thermal annealing, ring resonators, silicon photonics, trimming

Identifiers

Local EPrints ID: 417957
URI: https://eprints.soton.ac.uk/id/eprint/417957
ISSN: 1077-260X
PURE UUID: db7fae25-e5ed-468f-8a20-6e8e51a94f36
ORCID for X. Chen: ORCID iD orcid.org/0000-0002-0994-5401
ORCID for W. Cao: ORCID iD orcid.org/0000-0003-1431-7060
ORCID for S. Mailis: ORCID iD orcid.org/0000-0001-8100-2670
ORCID for A.C. Peacock: ORCID iD orcid.org/0000-0002-1940-7172

Catalogue record

Date deposited: 19 Feb 2018 17:30
Last modified: 06 Jun 2018 12:56

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Contributors

Author: X. Chen ORCID iD
Author: W. Cao ORCID iD
Author: A.F.J. Runge
Author: Y. Franz
Author: C.G. Littlejohns
Author: S. Mailis ORCID iD
Author: A.C. Peacock ORCID iD
Author: D.J. Thomson
Author: G.T. Reed

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