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A lift-off method for wafer scale hetero-structuring of 2D materials

A lift-off method for wafer scale hetero-structuring of 2D materials
A lift-off method for wafer scale hetero-structuring of 2D materials
The isolation of graphene [1] and closely related materials such as transition metal dichalcogenides [2], has ‎sparked intensive worldwide research efforts towards the large scale deposition of 2D crystals and films [3][4]. ‎So far there has been no clear winner method for the fabrication of wafer scale heterostructures in a low cost ‎and facile manner, which is an imperative step towards the commercialization of 2D integrated circuits. ‎Currently the techniques that have been reported in the literature employ epitaxial growth of single crystal ‎TMDCs and mechanical stacking of CVD grown or exfoliated flakes resulting in 2D flake heterostructures [5][6].

Here we present a large-scale method for fabricating 2D heterostructures based on the common ‎photolithographic patterning technique of lift-off. The procedure consists of the following steps i) the acceptor ‎substrate is patterned using photolithography ii) CVD grown (graphene or MoS2) film is transferred via a ‎polymer assisted transfer from its original substrate to the acceptor substrate iii) then the polymer is dissolved ‎and finally iv) the 2D material is lifted – off by dissolution of the photoresist layer in suitable solvents. The ‎procedure can be repeated for deposition of additional patterned layer to form heterostructures.‎

Furthermore, by employing a double layer photoresist method optimized for the 2D materials, where instead of ‎an alkaline developer solvent is used for the development of the pattern, each sequential transfer / patterning ‎step does not interfere with the already transferred layers, and it is the material agnostic nature of this method ‎that makes it suitable for multilayer stacking of patterned films.‎


References:-

‎[1] K. S. Novoselov,A. K. Geim, S. V. Morozov,D. Jiang,Y. Zhang,S. V. Dubonos, I. V. Grigorieva, A. A. Firsov “Electric Field Effect in ‎Atomically Thin Carbon Films,” Science, vol. 306, no. 5696, pp. 666–669, 2004.‎
‎[2] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2 : A New Direct- Gap Semiconductor,” Phys. Rev. ‎Lett., vol. 136805, pp. 2–5, 2010.‎
‎[3] X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition,” J. ‎Am. Chem. Soc, vol. 135, no. 14, pp. 5–8, 2013.‎
‎[4] C. C. Huang, F. Al-Saab, Y. Wang, J. Y. Ou, J. C. Walker, S. Wang, B. Gholipour, R. E. Simpson, and D. W. Hewak, “Scalable high-‎mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature,” ‎Nanoscale, vol. 6, no. 21, pp. 12792–12797, 2014.‎
‎[5] W. S. Mos, Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, ‎J. Lou, S. T. Pantelides, Z. Liu, W. Zhou, and P. M. Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” ‎vol. 13, no. September, p. 8, 2014.‎
‎[6] W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan, “Vertically stacked multi-heterostructures of layered materials ‎for logic transistors and complementary inverters.,” Nat. Mater., vol. 12, no. 3, pp. 246–52, 2013.‎

Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Abbas, Omar, Adnan
e7642f73-874e-4d19-a6c0-4753f6cbfcd0
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Mailis, Sakellaris
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Sazio, Pier-John
0d6200b5-9947-469a-8e97-9147da8a7158
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Abbas, Omar, Adnan
e7642f73-874e-4d19-a6c0-4753f6cbfcd0
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Mailis, Sakellaris
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Sazio, Pier-John
0d6200b5-9947-469a-8e97-9147da8a7158
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Aspiotis, Nikolaos, Abbas, Omar, Adnan, Zeimpekis, Ioannis, Mailis, Sakellaris, Sazio, Pier-John, Huang, Chung-Che and Hewak, Daniel (2017) A lift-off method for wafer scale hetero-structuring of 2D materials. EUROMAT 2017: European Congress and Exhibition on Advanced Materials and Processes, Thessaloniki, Greece. 17 - 22 Sep 2017. 1 pp .

Record type: Conference or Workshop Item (Other)

Abstract

The isolation of graphene [1] and closely related materials such as transition metal dichalcogenides [2], has ‎sparked intensive worldwide research efforts towards the large scale deposition of 2D crystals and films [3][4]. ‎So far there has been no clear winner method for the fabrication of wafer scale heterostructures in a low cost ‎and facile manner, which is an imperative step towards the commercialization of 2D integrated circuits. ‎Currently the techniques that have been reported in the literature employ epitaxial growth of single crystal ‎TMDCs and mechanical stacking of CVD grown or exfoliated flakes resulting in 2D flake heterostructures [5][6].

Here we present a large-scale method for fabricating 2D heterostructures based on the common ‎photolithographic patterning technique of lift-off. The procedure consists of the following steps i) the acceptor ‎substrate is patterned using photolithography ii) CVD grown (graphene or MoS2) film is transferred via a ‎polymer assisted transfer from its original substrate to the acceptor substrate iii) then the polymer is dissolved ‎and finally iv) the 2D material is lifted – off by dissolution of the photoresist layer in suitable solvents. The ‎procedure can be repeated for deposition of additional patterned layer to form heterostructures.‎

Furthermore, by employing a double layer photoresist method optimized for the 2D materials, where instead of ‎an alkaline developer solvent is used for the development of the pattern, each sequential transfer / patterning ‎step does not interfere with the already transferred layers, and it is the material agnostic nature of this method ‎that makes it suitable for multilayer stacking of patterned films.‎


References:-

‎[1] K. S. Novoselov,A. K. Geim, S. V. Morozov,D. Jiang,Y. Zhang,S. V. Dubonos, I. V. Grigorieva, A. A. Firsov “Electric Field Effect in ‎Atomically Thin Carbon Films,” Science, vol. 306, no. 5696, pp. 666–669, 2004.‎
‎[2] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2 : A New Direct- Gap Semiconductor,” Phys. Rev. ‎Lett., vol. 136805, pp. 2–5, 2010.‎
‎[3] X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition,” J. ‎Am. Chem. Soc, vol. 135, no. 14, pp. 5–8, 2013.‎
‎[4] C. C. Huang, F. Al-Saab, Y. Wang, J. Y. Ou, J. C. Walker, S. Wang, B. Gholipour, R. E. Simpson, and D. W. Hewak, “Scalable high-‎mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature,” ‎Nanoscale, vol. 6, no. 21, pp. 12792–12797, 2014.‎
‎[5] W. S. Mos, Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, ‎J. Lou, S. T. Pantelides, Z. Liu, W. Zhou, and P. M. Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” ‎vol. 13, no. September, p. 8, 2014.‎
‎[6] W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan, “Vertically stacked multi-heterostructures of layered materials ‎for logic transistors and complementary inverters.,” Nat. Mater., vol. 12, no. 3, pp. 246–52, 2013.‎

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A lift-off method for wafer scale hetero-structuring of 2D materials
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Published date: 22 September 2017
Venue - Dates: EUROMAT 2017: European Congress and Exhibition on Advanced Materials and Processes, Thessaloniki, Greece, 2017-09-17 - 2017-09-22

Identifiers

Local EPrints ID: 417964
URI: http://eprints.soton.ac.uk/id/eprint/417964
PURE UUID: f017c81d-d350-4ffc-8b20-293a54bf6715
ORCID for Omar, Adnan Abbas: ORCID iD orcid.org/0000-0002-3067-5311
ORCID for Sakellaris Mailis: ORCID iD orcid.org/0000-0001-8100-2670
ORCID for Pier-John Sazio: ORCID iD orcid.org/0000-0002-6506-9266
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 19 Feb 2018 17:31
Last modified: 29 Aug 2019 00:53

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