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Revealing the nature of low-temperature photoluminescence peaks by laser treatment in Van der Waals epitaxially grown WS2 monolayers

Revealing the nature of low-temperature photoluminescence peaks by laser treatment in Van der Waals epitaxially grown WS2 monolayers
Revealing the nature of low-temperature photoluminescence peaks by laser treatment in Van der Waals epitaxially grown WS2 monolayers
Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand their use in potential applications. Here, we demonstrate large-scale tungsten disulfide (WS2) monolayers grown by van der Waals Epitaxy (VdWE). We show that, in addition to the large structural uniformity and homogeneity of these samples, their optical properties are very sensitive to laser irradiation. We observe a time instability in the photoluminescence (PL) emission at low temperatures in the scale of seconds to minutes. Interestingly, this change of the PL spectra with time, which is due to laser induced carrier doping, is employed to successfully distinguish the emission of two negatively charged bright excitons. Furthermore, we also detect blinking sharp bound exciton emissions which are usually attractive for single photon sources. Our findings contribute to a deeper understanding of this complex carrier dynamics induced by laser irradiation which is very important for future optoelectronic devices based on large scale TMD monolayers.
2040-3364
4807-4815
Orsi Gordo, V.
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Balanta, M.A.G.
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Galvão Gobato, Y.
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Covre, F.S.
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Galeti, H.V.A.
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Iikawa, F.
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Couto, Jr., O.D.D.
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Qu, F.
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Henini, M.
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Hewak, D.W.
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Huang, C.-C.
825f7447-6d02-48f6-b95a-fa33da71f106
Orsi Gordo, V.
0bd25c90-2f41-44f2-9db2-5ab7bd96d3f3
Balanta, M.A.G.
567ed0c9-9337-4981-bb8d-deead7448185
Galvão Gobato, Y.
358855cd-054f-4797-93c1-cfc3961ca4fb
Covre, F.S.
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Galeti, H.V.A.
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Iikawa, F.
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Couto, Jr., O.D.D.
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Qu, F.
5a48d512-9dd8-43fe-8857-30d979f561ef
Henini, M.
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Hewak, D.W.
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Huang, C.-C.
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Orsi Gordo, V., Balanta, M.A.G., Galvão Gobato, Y., Covre, F.S., Galeti, H.V.A., Iikawa, F., Couto, Jr., O.D.D., Qu, F., Henini, M., Hewak, D.W. and Huang, C.-C. (2018) Revealing the nature of low-temperature photoluminescence peaks by laser treatment in Van der Waals epitaxially grown WS2 monolayers. Nanoscale, 2018 (10), 4807-4815. (doi:10.1039/C8NR00719E).

Record type: Article

Abstract

Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand their use in potential applications. Here, we demonstrate large-scale tungsten disulfide (WS2) monolayers grown by van der Waals Epitaxy (VdWE). We show that, in addition to the large structural uniformity and homogeneity of these samples, their optical properties are very sensitive to laser irradiation. We observe a time instability in the photoluminescence (PL) emission at low temperatures in the scale of seconds to minutes. Interestingly, this change of the PL spectra with time, which is due to laser induced carrier doping, is employed to successfully distinguish the emission of two negatively charged bright excitons. Furthermore, we also detect blinking sharp bound exciton emissions which are usually attractive for single photon sources. Our findings contribute to a deeper understanding of this complex carrier dynamics induced by laser irradiation which is very important for future optoelectronic devices based on large scale TMD monolayers.

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C8NR00719E _Accepted Manuscript - Accepted Manuscript
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Accepted/In Press date: 13 February 2018
e-pub ahead of print date: 19 February 2018
Published date: 14 March 2018

Identifiers

Local EPrints ID: 418197
URI: http://eprints.soton.ac.uk/id/eprint/418197
ISSN: 2040-3364
PURE UUID: 6b44620d-de41-40b1-994d-202d4c0b24b0
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for C.-C. Huang: ORCID iD orcid.org/0000-0003-3471-2463

Catalogue record

Date deposited: 23 Feb 2018 17:30
Last modified: 23 Mar 2021 05:01

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Contributors

Author: V. Orsi Gordo
Author: M.A.G. Balanta
Author: Y. Galvão Gobato
Author: F.S. Covre
Author: H.V.A. Galeti
Author: F. Iikawa
Author: O.D.D. Couto, Jr.
Author: F. Qu
Author: M. Henini
Author: D.W. Hewak ORCID iD
Author: C.-C. Huang ORCID iD

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