Direct UV written integrated waveguides using 213nm light
Direct UV written integrated waveguides using 213nm light
Direct UV writing is a technique capable of fabricating low-loss channel waveguides, couplers and Bragg gratings in planar silica devices by translating an appropriate substrate through a tightly focused UV beam. To date direct UV written waveguides have been primarily formed using 244nm laser light, relying on the photosensitivity provided by doping with germanium and boron. To induce sufficient refractive index change, necessary for wave guiding, the substrates also require hydrogenation prior to UV writing. Not only does this require additional processing but over time the hydrogen present within the silica out-diffuses, which can cause variation of the final written structures. Deep-UV light, with a wavelength of 213 nm, has previously been used to inscribe strong fibre Bragg gratings (FBGs) in hydrogen-free Ge-doped fibres. Here we present the use of a 213 nm UV laser to write planar waveguide devices without the need for hydrogen loading.
Flame Hydrolysis Deposition (FHD) was used to deposit core and cladding layers of doped silica onto a thermally oxidised silicon wafer. Individual planar chips were diced from this wafer and a 5th harmonic Q-switched solid state laser operating at 213 nm wavelength was used to inscribe waveguides within the germanium-doped core layer of the chips without prior hydrogen loading.
We shall present our latest results of direct deep-UV written waveguides, including; the characterisation of single mode waveguides, detailed fluence and loss measurements, induced refractive index change and the first demonstration of planar Bragg gratings and photonic structures written with 213nm light.
Gow, Paul C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Bannerman, Rex
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Gates, James
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Holmes, Christopher
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Smith, Peter
8979668a-8b7a-4838-9a74-1a7cfc6665f6
1 February 2018
Gow, Paul C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Bannerman, Rex
7f7d5c3e-8e5d-45d5-8fd7-8d1511330e08
Gates, James
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Holmes, Christopher
16306bb8-8a46-4fd7-bb19-a146758e5263
Smith, Peter
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Gow, Paul C., Bannerman, Rex, Gates, James, Holmes, Christopher and Smith, Peter
(2018)
Direct UV written integrated waveguides using 213nm light.
SPIE Photonics West 2018, United States.
27 Jan - 01 Feb 2018.
Record type:
Conference or Workshop Item
(Other)
Abstract
Direct UV writing is a technique capable of fabricating low-loss channel waveguides, couplers and Bragg gratings in planar silica devices by translating an appropriate substrate through a tightly focused UV beam. To date direct UV written waveguides have been primarily formed using 244nm laser light, relying on the photosensitivity provided by doping with germanium and boron. To induce sufficient refractive index change, necessary for wave guiding, the substrates also require hydrogenation prior to UV writing. Not only does this require additional processing but over time the hydrogen present within the silica out-diffuses, which can cause variation of the final written structures. Deep-UV light, with a wavelength of 213 nm, has previously been used to inscribe strong fibre Bragg gratings (FBGs) in hydrogen-free Ge-doped fibres. Here we present the use of a 213 nm UV laser to write planar waveguide devices without the need for hydrogen loading.
Flame Hydrolysis Deposition (FHD) was used to deposit core and cladding layers of doped silica onto a thermally oxidised silicon wafer. Individual planar chips were diced from this wafer and a 5th harmonic Q-switched solid state laser operating at 213 nm wavelength was used to inscribe waveguides within the germanium-doped core layer of the chips without prior hydrogen loading.
We shall present our latest results of direct deep-UV written waveguides, including; the characterisation of single mode waveguides, detailed fluence and loss measurements, induced refractive index change and the first demonstration of planar Bragg gratings and photonic structures written with 213nm light.
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Accepted/In Press date: 2018
Published date: 1 February 2018
Venue - Dates:
SPIE Photonics West 2018, United States, 2018-01-27 - 2018-02-01
Identifiers
Local EPrints ID: 418290
URI: http://eprints.soton.ac.uk/id/eprint/418290
PURE UUID: 26dc0785-18e2-4a6c-84b9-6158e91899fc
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Date deposited: 27 Feb 2018 17:30
Last modified: 07 Oct 2020 07:19
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