Particulate reduction in ternary-compound film growth via pulsed laser deposition from segmented binary-targets

Abstract

We present the hetero-epitaxial growth of high-quality crystalline Y₃Ga₅O₁₂ onto a <100>-oriented YAG substrate via pulsed laser deposition, using mixed ternary-compound and segmented binary-compound targets. We observe that a Y₃Ga₅O₁₂ film fabricated using a segmented target (Y₂O₃/Ga₂O₃) contained ~ 100 times fewer scattering points than a film grown using a mixed Y₃Ga₅O₁₂ target. We show that following ablation, the surface of the mixed compound (ternary) target had laser-induced cone structures, whereas the surface of single compound (binary) targets did not. It is concluded that the different ablation dynamics of the oxide constituents in the respective targets plays a significant role in the origin of the scattering points in the resultant films.

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Identifiers

ORCID for James A. Grant-Jacob: orcid.org/0000-0002-4270-4247

ORCID for David P. Shepherd: orcid.org/0000-0002-4561-8184

ORCID for Robert W. Eason: orcid.org/0000-0001-9704-2204

ORCID for Jacob I. Mackenzie: orcid.org/0000-0002-3355-6051

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