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Raw data for "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"

Raw data for "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"
Raw data for "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"
This dataset contains the raw data used for the figures in the paper Kapil Debnath, David J. Thomson, Weiwei Zhang, Ali Z Khokhar, Callum Littlejohns, James Byers, Lorenzo Mastronardi, Muhammad K. Husain, Fredric Y. Gardes, Graham T. Reed, and Shinichi Saito "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"Abstract: In silicon photonics, primarily carrier depletion scheme has been used for demonstrating high speed electro-optic modulation. However, in terms of phase modulation efficiency, carrier accumulation process offers almost an order of magnitude improvement over carrier depletion process. Due to fabrication restriction, previously reported accumulation modulator designs only considered vertical metal-oxide-semiconductor (MOS)-capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, we design and experimentally demonstrate an all-silicon accumulation phase modulator based on a lateral MOS-capacitor. Using a Mach-Zehnder interferometer (MZI) modulator with a 500-µm-long phase-shifter, we demonstrate high speed modulation up to 25 Gbit-s-1 with a modulation efficiency (VπLπ) of 1.53 V-cm.
University of Southampton
Debnath, Kapil
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Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Byers, James
124172c9-0709-4cb9-992e-acedc2eb02bf
Mastronardi, Lorenzo
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Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Byers, James
124172c9-0709-4cb9-992e-acedc2eb02bf
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Debnath, Kapil, Thomson, David, Zhang, Weiwei, Khokhar, Ali, Littlejohns, Callum, Byers, James, Mastronardi, Lorenzo, Husain, Muhammad, Gardes, Frederic, Reed, Graham and Saito, Shinichi (2017) Raw data for "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor". University of Southampton doi:10.5258/SOTON/D0305 [Dataset]

Record type: Dataset

Abstract

This dataset contains the raw data used for the figures in the paper Kapil Debnath, David J. Thomson, Weiwei Zhang, Ali Z Khokhar, Callum Littlejohns, James Byers, Lorenzo Mastronardi, Muhammad K. Husain, Fredric Y. Gardes, Graham T. Reed, and Shinichi Saito "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"Abstract: In silicon photonics, primarily carrier depletion scheme has been used for demonstrating high speed electro-optic modulation. However, in terms of phase modulation efficiency, carrier accumulation process offers almost an order of magnitude improvement over carrier depletion process. Due to fabrication restriction, previously reported accumulation modulator designs only considered vertical metal-oxide-semiconductor (MOS)-capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, we design and experimentally demonstrate an all-silicon accumulation phase modulator based on a lateral MOS-capacitor. Using a Mach-Zehnder interferometer (MZI) modulator with a 500-µm-long phase-shifter, we demonstrate high speed modulation up to 25 Gbit-s-1 with a modulation efficiency (VπLπ) of 1.53 V-cm.

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More information

Published date: 2017
Organisations: ORC Research, Optoelectronics Research Centre, Electronics & Computer Science, Nanoelectronics and Nanotechnology, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 418363
URI: https://eprints.soton.ac.uk/id/eprint/418363
PURE UUID: 506ac695-3faa-4f42-a794-594ca8f820b6
ORCID for Lorenzo Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 01 Mar 2018 17:33
Last modified: 06 Jun 2018 12:28

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Contributors

Creator: Kapil Debnath
Creator: David Thomson
Creator: Weiwei Zhang
Creator: Ali Khokhar
Creator: Callum Littlejohns
Creator: James Byers
Creator: Lorenzo Mastronardi ORCID iD
Creator: Muhammad Husain
Creator: Frederic Gardes
Creator: Graham Reed
Creator: Shinichi Saito ORCID iD

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