Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator
Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator
We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.
electronic devices, silicon photonics, laser material processing, semiconductor laser
Lourenço, M.A.
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Milošević, M.
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Gorin, Arnaud
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Gwilliam, R.M.
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Homewood, K.P.
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2016
Lourenço, M.A.
95dbfc7a-1bd9-4d83-a0a1-4d539fa546d0
Milošević, M.
b28da945-84a5-4317-8896-6d9ea6a69589
Gorin, Arnaud
4a7aff7c-55e8-450b-b6d5-87c84725045c
Gwilliam, R.M.
b7377647-f6b4-487a-a9b9-fe9fd2f54c03
Homewood, K.P.
699f58f9-f401-4d5d-8536-7a19d268642e
Lourenço, M.A., Milošević, M., Gorin, Arnaud, Gwilliam, R.M. and Homewood, K.P.
(2016)
Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator.
Scientific Reports, 5, [37501].
(doi:10.1038/srep37501).
Abstract
We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.
Text
srep37501
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Accepted/In Press date: 27 October 2016
e-pub ahead of print date: 22 November 2016
Published date: 2016
Keywords:
electronic devices, silicon photonics, laser material processing, semiconductor laser
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Local EPrints ID: 418700
URI: http://eprints.soton.ac.uk/id/eprint/418700
PURE UUID: 9b33347d-1036-47ff-a002-efb6e7af78f1
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Date deposited: 19 Mar 2018 17:30
Last modified: 15 Mar 2024 18:45
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Contributors
Author:
M.A. Lourenço
Author:
M. Milošević
Author:
Arnaud Gorin
Author:
R.M. Gwilliam
Author:
K.P. Homewood
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