Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters
Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters
Data, code and plots used in the paper, "Temperature dependent polarity inversion in double-metal terahertz emitters "
Submitted to be published in Electronics Letters.
The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.
University of Southampton
Gow, Paul
193394b1-fe2d-41de-a9aa-6de7e5925b18
McBryde, Duncan
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Berry, Sam
0f768f48-36c4-4599-8917-7aae657378a7
Apostolopoulos, Vasileios
8a898740-4c71-4040-a577-9b9d70530b4d
Gow, Paul
193394b1-fe2d-41de-a9aa-6de7e5925b18
McBryde, Duncan
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Berry, Sam
0f768f48-36c4-4599-8917-7aae657378a7
Apostolopoulos, Vasileios
8a898740-4c71-4040-a577-9b9d70530b4d
Gow, Paul
(2018)
Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters.
University of Southampton
doi:10.5258/SOTON/D0447
[Dataset]
Abstract
Data, code and plots used in the paper, "Temperature dependent polarity inversion in double-metal terahertz emitters "
Submitted to be published in Electronics Letters.
The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.
Archive
Datasets_for_THz_polarity_flip_paper.zip
- Dataset
Text
README.txt
- Dataset
More information
Published date: 2018
Organisations:
ORC Research, Quantum, Light & Matter Group
Identifiers
Local EPrints ID: 418709
URI: http://eprints.soton.ac.uk/id/eprint/418709
PURE UUID: 7a86866f-c438-4e4f-818e-6eba0fa1fd67
Catalogue record
Date deposited: 19 Mar 2018 17:30
Last modified: 08 Nov 2023 02:45
Export record
Altmetrics
Contributors
Creator:
Paul Gow
Contributor:
Duncan McBryde
Contributor:
Sam Berry
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics