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Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters

Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters
Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters
Data, code and plots used in the paper, "Temperature dependent polarity inversion in double-metal terahertz emitters " Submitted to be published in Electronics Letters. The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.
University of Southampton
Gow, Paul
193394b1-fe2d-41de-a9aa-6de7e5925b18
McBryde, Duncan
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Berry, Sam
0f768f48-36c4-4599-8917-7aae657378a7
Apostolopoulos, Vasileios
8a898740-4c71-4040-a577-9b9d70530b4d
Gow, Paul
193394b1-fe2d-41de-a9aa-6de7e5925b18
McBryde, Duncan
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Berry, Sam
0f768f48-36c4-4599-8917-7aae657378a7
Apostolopoulos, Vasileios
8a898740-4c71-4040-a577-9b9d70530b4d

Gow, Paul (2018) Dataset for Temperature dependent polarity inversion in double-metal terahertz emitters. University of Southampton doi:10.5258/SOTON/D0447 [Dataset]

Record type: Dataset

Abstract

Data, code and plots used in the paper, "Temperature dependent polarity inversion in double-metal terahertz emitters " Submitted to be published in Electronics Letters. The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.

Archive
Datasets_for_THz_polarity_flip_paper.zip - Dataset
Available under License Creative Commons Attribution.
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Text
README.txt - Dataset
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More information

Published date: 2018
Organisations: ORC Research, Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 418709
URI: http://eprints.soton.ac.uk/id/eprint/418709
DOI: doi:10.5258/SOTON/D0447
PURE UUID: 7a86866f-c438-4e4f-818e-6eba0fa1fd67
ORCID for Paul Gow: ORCID iD orcid.org/0000-0002-3247-9082
ORCID for Sam Berry: ORCID iD orcid.org/0000-0002-9538-8655
ORCID for Vasileios Apostolopoulos: ORCID iD orcid.org/0000-0003-3733-2191

Catalogue record

Date deposited: 19 Mar 2018 17:30
Last modified: 08 Nov 2023 02:45

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Contributors

Creator: Paul Gow ORCID iD
Contributor: Duncan McBryde
Contributor: Sam Berry ORCID iD
Research team head: Vasileios Apostolopoulos ORCID iD

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