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20Gbps silicon lateral MOS-Capacitor electro-optic modulator

20Gbps silicon lateral MOS-Capacitor electro-optic modulator
20Gbps silicon lateral MOS-Capacitor electro-optic modulator
This work presents an experimental demonstration of a 500µm long MZI carrier accumulation type modulator based on lateral MOS-capacitor integration on a silicon platform. A modulation efficiency (VπLπ) of 1.53V-cm, moderate modulation speed of 20Gbit-s-1 and extinction ratio of 3.65dB have been obtained.
Modulators, Optical Interconnects, Integrated optics devices
1-2
OSA
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Byers, James
124172c9-0709-4cb9-992e-acedc2eb02bf
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Byers, James
124172c9-0709-4cb9-992e-acedc2eb02bf
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Debnath, Kapil, Thomson, David, Zhang, Weiwei, Khokhar, Ali, Littlejohns, Callum, Byers, James, Mastronardi, Lorenzo, Husain, Muhammad K., Gardes, Frederic, Reed, Graham and Saito, Shinichi (2018) 20Gbps silicon lateral MOS-Capacitor electro-optic modulator. In CLEO: Science and Innovations, San Jose CA, 13-18 May 2018. OSA. pp. 1-2 . (doi:10.1364/CLEO_SI.2018.SM3B.5).

Record type: Conference or Workshop Item (Paper)

Abstract

This work presents an experimental demonstration of a 500µm long MZI carrier accumulation type modulator based on lateral MOS-capacitor integration on a silicon platform. A modulation efficiency (VπLπ) of 1.53V-cm, moderate modulation speed of 20Gbit-s-1 and extinction ratio of 3.65dB have been obtained.

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CLEO_SI-2018-SM3B.5 - Version of Record
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More information

Accepted/In Press date: 26 February 2018
Published date: 2018
Venue - Dates: 2018 Conference on Lasers and Electro-Optics, Hong Kong Convention and Exhibition Centre, San Jose, United States, 2018-05-13 - 2018-05-18
Keywords: Modulators, Optical Interconnects, Integrated optics devices
Learn more about Sustainable Electronic Technologies research Learn more about Electronics & Computer Science research Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 420096
URI: http://eprints.soton.ac.uk/id/eprint/420096
DOI: doi:10.1364/CLEO_SI.2018.SM3B.5
PURE UUID: db81783a-3745-493a-9df0-a4db14cd5928
ORCID for Lorenzo Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for Frederic Gardes: ORCID iD orcid.org/0000-0003-1400-3272
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 26 Apr 2018 16:30
Last modified: 16 Mar 2024 04:11

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Contributors

Author: Kapil Debnath
Author: David Thomson
Author: Weiwei Zhang
Author: Ali Khokhar
Author: Callum Littlejohns
Author: James Byers
Author: Lorenzo Mastronardi ORCID iD
Author: Muhammad K. Husain
Author: Frederic Gardes ORCID iD
Author: Graham Reed
Author: Shinichi Saito ORCID iD

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