READ ME File For 'Dataset for Switching kinetics of SiC resistive memory for harsh environments'

Dataset DOI: 10.5258/SOTON/D0506

ReadMe Author: Katrina Morgan, University of Southampton

This dataset supports the publication:
Morgan, K. et al (2015). Switching kinetics of SiC resistive memory for harsh environments. AIP Advances.

This dataset contains:

Data supporting the following figures

Figure 2a/b: Cu/a-SiC/Au memory cell measured using (a) DC voltage sweeps exhibiting ROFF/RON ∼ 107, VSET ∼ 0.6V and VRESET ∼ − 0.2V (b) pulses using a -5V and +10V amplitude and a 0.5s and 0.01s width for RESET and SET respectively, exhibiting RON ∼ 30Ω, ROFF ∼ 1010Ω, resulting in ROFF/RON ≥ 108.

Figure 3: Thermal conductivity and resistivity of reported ECM cells and Cu/a-SiC/Au cells for SET and RESET. Dashed red line determines the switching mechanism; above it indicates ionic without joule heating whilst below indicates ionic motion with joule heating contributions, at 1V and 10V. The SET mechanism for the reported memory cells is well into the ionic only regime, even at 10V. The references are GeS,4 SiO2,7 Cu:SiO2,6 Cu:C,17 MSQ,5 CU:WO318 and SiC(GST).

Figure 4: Time dependencies of pulsed switching for Cu/a-SiC/Au memory cells, using pulse widths of 500μs-0.5s. The SET process shows exponential decrease in SET pulse width for increase in pulse amplitude and the RESET process shows exponential decrease in RESET pulse width with 1/V2 relation.

Figure 5: Pulsed measurements for Cu/a-SiC/Au memory cell before and after ionizing irradiation using a 50ms pulse width, with increasing steps from -0.4V to -2.5V for RESET and at +8V for SET.

Figurr 6a/b: I-V plots before and after irradiation of Cu/a-Si/Au memory cells showing (a) LRS after pulsed and DC sweep measurements, with error bars the same size as the data points. A gradient of 1.00 ± 0.02 indicates ohmic conduction. A higher resistance is seen for DC sweep measurements compared to pulsing measurements, due to lower current compliance; (b) HRS and pristine sweeps, after DC sweep measurements. Linear fit for HRS indicates Schottky Emission. No noticeable change in conduction mechanism is observed after radiation for LRS, HRS or pristine modes.

Related projects:
Spintronic device in Si/Ge Heterostructures

Date that the file was created: April 2018