Impact of small phonon energies on the charge-carrier lifetimes in metal-halide perovskites
Impact of small phonon energies on the charge-carrier lifetimes in metal-halide perovskites
Metal-halide perovskite (MHP) solar cells exhibit long nonradiative lifetimes as a crucial feature enabling high efficiencies. Long nonradiative lifetimes occur if the transfer of electronic into vibrational energy is slow due to, e.g., a low trap density, weak electron-phonon coupling, or the requirement to release many phonons in the electronic transition. Here, we combine known material properties of MHPs with basic models for electron-phonon coupling and multiphonon-transition rates in polar semiconductors. We find that the low phonon energies of MAPbI3 lead to a strong dependence of recombination rates on trap position, which we deduce from the underlying physical effects determining nonradiative transitions. This is important for nonradiative recombination in MHPs, as it implies that they are rather insensitive to defects that are not at midgap energy, which can lead to long lifetimes. Therefore, the low phonon energies of MHPs are likely an important factor for their optoelectronic performance.
939-946
Kirchartz, Thomas
14b2a706-d1d5-496e-85d7-9d4742792093
Markvart, Tom
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
Rau, Uwe
0d8a1c76-ab35-4bb0-ae5f-f5072eeca755
Egger, David A.
a2fd2375-f3b4-495c-ad0b-8bcaef3d9e2e
1 March 2018
Kirchartz, Thomas
14b2a706-d1d5-496e-85d7-9d4742792093
Markvart, Tom
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
Rau, Uwe
0d8a1c76-ab35-4bb0-ae5f-f5072eeca755
Egger, David A.
a2fd2375-f3b4-495c-ad0b-8bcaef3d9e2e
Kirchartz, Thomas, Markvart, Tom, Rau, Uwe and Egger, David A.
(2018)
Impact of small phonon energies on the charge-carrier lifetimes in metal-halide perovskites.
Journal of Physical Chemistry Letters, 9 (5), .
(doi:10.1021/acs.jpclett.7b03414).
Abstract
Metal-halide perovskite (MHP) solar cells exhibit long nonradiative lifetimes as a crucial feature enabling high efficiencies. Long nonradiative lifetimes occur if the transfer of electronic into vibrational energy is slow due to, e.g., a low trap density, weak electron-phonon coupling, or the requirement to release many phonons in the electronic transition. Here, we combine known material properties of MHPs with basic models for electron-phonon coupling and multiphonon-transition rates in polar semiconductors. We find that the low phonon energies of MAPbI3 lead to a strong dependence of recombination rates on trap position, which we deduce from the underlying physical effects determining nonradiative transitions. This is important for nonradiative recombination in MHPs, as it implies that they are rather insensitive to defects that are not at midgap energy, which can lead to long lifetimes. Therefore, the low phonon energies of MHPs are likely an important factor for their optoelectronic performance.
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Accepted/In Press date: 6 February 2018
e-pub ahead of print date: 7 February 2018
Published date: 1 March 2018
Identifiers
Local EPrints ID: 420699
URI: http://eprints.soton.ac.uk/id/eprint/420699
ISSN: 1948-7185
PURE UUID: f3c991e9-3c00-482a-bcbb-b2d95747babb
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Date deposited: 11 May 2018 16:30
Last modified: 05 Jun 2024 19:29
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Author:
Thomas Kirchartz
Author:
Uwe Rau
Author:
David A. Egger
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