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High speed chalcogenide glass electrochemical metallization cells with various active metals

High speed chalcogenide glass electrochemical metallization cells with various active metals
High speed chalcogenide glass electrochemical metallization cells with various active metals
We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent and repeatable resistive switching behaviour, and had a retention of 3 and >43 days, respectively; both had switching speeds of < 5 ns. Devices with Cr and Fe active metals displayed incomplete or intermittent resistive switching, and devices with Mo and Al active electrodes displayed no resistive switching ability. Deeper penetration of the active metal into the GaLaSO layer resulted in greater resistive switching ability of the cell. The off-state resistivity was greater for more reactive active metals which may be due to a thicker intermediate layer.
0957-4484
Hughes, Mark
f2343613-b80a-4530-a342-65d15661c0b7
Burgess, Alexander
1b73d523-b858-45e1-a2a0-d68502032f99
Hinder, Steven
e2f8f8f6-54dc-4870-a6d6-dbbe87b1da87
Gholizadeh, Abdolbaset
1ae41e66-2d90-499d-89d8-ebb1150b8c39
Craig, Christopher
2328b42b-552e-4a82-941d-45449e952f10
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Hughes, Mark
f2343613-b80a-4530-a342-65d15661c0b7
Burgess, Alexander
1b73d523-b858-45e1-a2a0-d68502032f99
Hinder, Steven
e2f8f8f6-54dc-4870-a6d6-dbbe87b1da87
Gholizadeh, Abdolbaset
1ae41e66-2d90-499d-89d8-ebb1150b8c39
Craig, Christopher
2328b42b-552e-4a82-941d-45449e952f10
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Hughes, Mark, Burgess, Alexander, Hinder, Steven, Gholizadeh, Abdolbaset, Craig, Christopher and Hewak, Daniel (2018) High speed chalcogenide glass electrochemical metallization cells with various active metals. Nanotechnology. (doi:10.1088/1361-6528/aac483).

Record type: Article

Abstract

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent and repeatable resistive switching behaviour, and had a retention of 3 and >43 days, respectively; both had switching speeds of < 5 ns. Devices with Cr and Fe active metals displayed incomplete or intermittent resistive switching, and devices with Mo and Al active electrodes displayed no resistive switching ability. Deeper penetration of the active metal into the GaLaSO layer resulted in greater resistive switching ability of the cell. The off-state resistivity was greater for more reactive active metals which may be due to a thicker intermediate layer.

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Hughes+et+al_2018_Nanotechnology_10.1088_1361-6528_aac483 - Accepted Manuscript
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e-pub ahead of print date: 14 May 2018

Identifiers

Local EPrints ID: 421019
URI: http://eprints.soton.ac.uk/id/eprint/421019
ISSN: 0957-4484
PURE UUID: bfb9be49-fc36-4bb2-9df5-5c3ebf02928f
ORCID for Christopher Craig: ORCID iD orcid.org/0000-0001-6919-4294
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 21 May 2018 16:30
Last modified: 07 Oct 2020 06:28

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