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Characterization of epitaxial heavily-doped silicon regions formed by HWCVD using Micro-Raman and Micro-Photoluminescence Spectroscopy

Characterization of epitaxial heavily-doped silicon regions formed by HWCVD using Micro-Raman and Micro-Photoluminescence Spectroscopy
Characterization of epitaxial heavily-doped silicon regions formed by HWCVD using Micro-Raman and Micro-Photoluminescence Spectroscopy

We report on the characterization of heavily boron doped epitaxial silicon regions grown in a hot-wire chemical vapor deposition tool, using micro-Raman and photoluminescence spectroscopy. In particular, the use of this approach for emitter fabrication in an interdigitated back contact silicon solar cell is studied, by analyzing its suitability concerning selective growth, uniformity, anneal time, and luminescent defects. We show that by reducing the silane flow rate, both the required postanneal time and intensity of defect luminescence are reduced. Furthermore, we show that selective area growth does not affect either the quality of the films or the sharpness of the resulting lateral doping profile. The uniformity of the doping is shown to be better than that achieved using laser doping.

Epitaxy, hot-wire chemical vapor deposition (HWCVD), laser doping, silicon, spectral photoluminescence (PL)
813-819
Rahman, Tasmiat
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Nguyen, Hieu T.
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Tarazona, Antulio
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Shi, Jingxing
2632e5a1-10ba-4b05-9bec-f86facfcee66
Han, Young Joon
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Franklin, Evan
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Macdonald, Daniel
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Boden, Stuart A.
01b35080-37e4-48ca-bdc7-bde7971002d6
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Nguyen, Hieu T.
4d696a0e-438c-44dd-9807-d75a82459b4a
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Shi, Jingxing
2632e5a1-10ba-4b05-9bec-f86facfcee66
Han, Young Joon
d96ceb63-3997-4719-b08e-fbe7e7ce777f
Franklin, Evan
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Macdonald, Daniel
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Boden, Stuart A.
01b35080-37e4-48ca-bdc7-bde7971002d6

Rahman, Tasmiat, Nguyen, Hieu T., Tarazona, Antulio, Shi, Jingxing, Han, Young Joon, Franklin, Evan, Macdonald, Daniel and Boden, Stuart A. (2018) Characterization of epitaxial heavily-doped silicon regions formed by HWCVD using Micro-Raman and Micro-Photoluminescence Spectroscopy. IEEE Journal of Photovoltaics, 8 (3), 813-819. (doi:10.1109/JPHOTOV.2018.2818284).

Record type: Article

Abstract

We report on the characterization of heavily boron doped epitaxial silicon regions grown in a hot-wire chemical vapor deposition tool, using micro-Raman and photoluminescence spectroscopy. In particular, the use of this approach for emitter fabrication in an interdigitated back contact silicon solar cell is studied, by analyzing its suitability concerning selective growth, uniformity, anneal time, and luminescent defects. We show that by reducing the silane flow rate, both the required postanneal time and intensity of defect luminescence are reduced. Furthermore, we show that selective area growth does not affect either the quality of the films or the sharpness of the resulting lateral doping profile. The uniformity of the doping is shown to be better than that achieved using laser doping.

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Accepted/In Press date: 1 March 2018
e-pub ahead of print date: 12 April 2018
Published date: May 2018
Keywords: Epitaxy, hot-wire chemical vapor deposition (HWCVD), laser doping, silicon, spectral photoluminescence (PL)

Identifiers

Local EPrints ID: 421612
URI: http://eprints.soton.ac.uk/id/eprint/421612
PURE UUID: ad8ef38c-5270-4b1c-b093-cb74f79003e4

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Date deposited: 15 Jun 2018 16:31
Last modified: 16 Dec 2019 18:22

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Contributors

Author: Tasmiat Rahman
Author: Hieu T. Nguyen
Author: Jingxing Shi
Author: Young Joon Han
Author: Evan Franklin
Author: Daniel Macdonald
Author: Stuart A. Boden

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