Compositionally controlled plasmonics in amorphous semiconductor metasurfaces
Compositionally controlled plasmonics in amorphous semiconductor metasurfaces
Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.
20861-20867
Piccinotti, Davide
15c6d296-3464-43ec-943a-8155e66d2a51
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Yao, Jin
83dff1cd-6f7c-4b47-968e-18c64ffcb24b
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
6 August 2018
Piccinotti, Davide
15c6d296-3464-43ec-943a-8155e66d2a51
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Yao, Jin
83dff1cd-6f7c-4b47-968e-18c64ffcb24b
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
Piccinotti, Davide, Gholipour, Behrad, Yao, Jin, MacDonald, Kevin F., Hayden, Brian and Zheludev, Nikolai
(2018)
Compositionally controlled plasmonics in amorphous semiconductor metasurfaces.
Optics Express, 26 (16), .
(doi:10.1364/OE.26.020861).
Abstract
Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.
Text
amorphous BiTe plasmonics accepted manuscript
- Accepted Manuscript
Text
oe-26-16-20861
- Version of Record
More information
Accepted/In Press date: 5 June 2018
e-pub ahead of print date: 31 July 2018
Published date: 6 August 2018
Identifiers
Local EPrints ID: 421788
URI: http://eprints.soton.ac.uk/id/eprint/421788
ISSN: 1094-4087
PURE UUID: 655d5a60-d401-44e5-8266-bfb928935074
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Date deposited: 27 Jun 2018 16:30
Last modified: 16 Mar 2024 06:43
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Contributors
Author:
Davide Piccinotti
Author:
Behrad Gholipour
Author:
Kevin F. MacDonald
Author:
Nikolai Zheludev
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