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Compositionally controlled plasmonics in amorphous semiconductor metasurfaces

Compositionally controlled plasmonics in amorphous semiconductor metasurfaces
Compositionally controlled plasmonics in amorphous semiconductor metasurfaces
Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.
1094-4087
20861-20867
Piccinotti, Davide
15c6d296-3464-43ec-943a-8155e66d2a51
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Yao, Jin
83dff1cd-6f7c-4b47-968e-18c64ffcb24b
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
Piccinotti, Davide
15c6d296-3464-43ec-943a-8155e66d2a51
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Yao, Jin
83dff1cd-6f7c-4b47-968e-18c64ffcb24b
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6

Piccinotti, Davide, Gholipour, Behrad, Yao, Jin, MacDonald, Kevin F., Hayden, Brian and Zheludev, Nikolai (2018) Compositionally controlled plasmonics in amorphous semiconductor metasurfaces. Optics Express, 26 (16), 20861-20867. (doi:10.1364/OE.26.020861).

Record type: Article

Abstract

Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.

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Accepted/In Press date: 5 June 2018
e-pub ahead of print date: 31 July 2018
Published date: 6 August 2018

Identifiers

Local EPrints ID: 421788
URI: http://eprints.soton.ac.uk/id/eprint/421788
ISSN: 1094-4087
PURE UUID: 655d5a60-d401-44e5-8266-bfb928935074
ORCID for Kevin F. MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for Brian Hayden: ORCID iD orcid.org/0000-0002-7762-1812
ORCID for Nikolai Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 27 Jun 2018 16:30
Last modified: 26 Nov 2021 05:48

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Contributors

Author: Davide Piccinotti
Author: Behrad Gholipour
Author: Jin Yao
Author: Brian Hayden ORCID iD

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