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Electrochemical hole injection into the valence band of thiol stabilised CdTe quantum dots

Electrochemical hole injection into the valence band of thiol stabilised CdTe quantum dots
Electrochemical hole injection into the valence band of thiol stabilised CdTe quantum dots
The electrochemical injection of holes into the valence band of mercaptopropionic acid stabilised CdTe quantum dots in aqueous solution was investigated employing a glassy carbon rotating disc electrode. Analysis of the first exciton peak and the electrochemical responses as a function of the particle size was performed within the framework of the effective mass approximation and tight-binding models. It is demonstrated that the energy of the quantum dot band edges can be predicted from capacitance data of bulk semiconductor electrodes modified by the same stabilising groups as on the dots. In this paper we show that the thiol binding shifts the band edges of the CdTe particles by approximately 0.7 eV with respect to the theoretical value in the absence of stabilising groups. The results also revealed a significant dependence of the hole-injection rate on the electrochemical potential. ? the Owner Societies 2009.
1463-9076
10080-10086
Kissling, G.P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Ferm?n, D.J.
3bfcec3e-75fc-487b-9367-ea8c805f4c0d
Kissling, G.P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Ferm?n, D.J.
3bfcec3e-75fc-487b-9367-ea8c805f4c0d

Kissling, G.P. and Ferm?n, D.J. (2009) Electrochemical hole injection into the valence band of thiol stabilised CdTe quantum dots. Physical Chemistry Chemical Physics, 11 (43), 10080-10086. (doi:10.1039/b910127f).

Record type: Article

Abstract

The electrochemical injection of holes into the valence band of mercaptopropionic acid stabilised CdTe quantum dots in aqueous solution was investigated employing a glassy carbon rotating disc electrode. Analysis of the first exciton peak and the electrochemical responses as a function of the particle size was performed within the framework of the effective mass approximation and tight-binding models. It is demonstrated that the energy of the quantum dot band edges can be predicted from capacitance data of bulk semiconductor electrodes modified by the same stabilising groups as on the dots. In this paper we show that the thiol binding shifts the band edges of the CdTe particles by approximately 0.7 eV with respect to the theoretical value in the absence of stabilising groups. The results also revealed a significant dependence of the hole-injection rate on the electrochemical potential. ? the Owner Societies 2009.

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Published date: 16 September 2009

Identifiers

Local EPrints ID: 422006
URI: http://eprints.soton.ac.uk/id/eprint/422006
ISSN: 1463-9076
PURE UUID: 18ffdd33-f190-41b5-ba24-2aa8d2ef8879
ORCID for G.P. Kissling: ORCID iD orcid.org/0000-0003-4701-7160

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Date deposited: 12 Jul 2018 16:31
Last modified: 15 Mar 2024 20:29

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Contributors

Author: G.P. Kissling ORCID iD
Author: D.J. Ferm?n

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