Metal-assisted chemically etched black silicon for crystalline silicon solar cells
Metal-assisted chemically etched black silicon for crystalline silicon solar cells
Nanoscale textured silicon has the potential to overcome the optical challenges faced in the photovoltaic (PV) industry that remain in maximisation of photo-generation. However, due to the high aspect ratio of these structures, the electrical losses remain a huge challenge for this type of architecture. In this work, we use a Metal Assisted Chemical Etch (MACE) process to fabricate black silicon and analyse the influence on morphology of etch time and silver nitrate concentration. Furthermore, we show good surface passivation of the nanostructures using atomic layer deposition of AlOx, and study the optical influence of dual-passivation stacks using ultra-thin oxides.
Black silicon, Metal assisted chemical etching, Nanowires, Surface passivation, Silicon solar cells
Scheul, Tudor, Emilian
daf1d539-813a-4f66-b2c1-86f7e91fde8c
Khorani, Edris
bbdfbcc3-5dd0-4a73-80ed-7a0bff1d5388
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
April 2018
Scheul, Tudor, Emilian
daf1d539-813a-4f66-b2c1-86f7e91fde8c
Khorani, Edris
bbdfbcc3-5dd0-4a73-80ed-7a0bff1d5388
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Scheul, Tudor, Emilian, Khorani, Edris, Rahman, Tasmiat and Boden, Stuart
(2018)
Metal-assisted chemically etched black silicon for crystalline silicon solar cells.
PV-SAT 14, Imperial College London, London, United Kingdom.
18 - 20 Apr 2018.
4 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Nanoscale textured silicon has the potential to overcome the optical challenges faced in the photovoltaic (PV) industry that remain in maximisation of photo-generation. However, due to the high aspect ratio of these structures, the electrical losses remain a huge challenge for this type of architecture. In this work, we use a Metal Assisted Chemical Etch (MACE) process to fabricate black silicon and analyse the influence on morphology of etch time and silver nitrate concentration. Furthermore, we show good surface passivation of the nanostructures using atomic layer deposition of AlOx, and study the optical influence of dual-passivation stacks using ultra-thin oxides.
Text
PVsat14_Scheul_FINAL
- Accepted Manuscript
More information
Published date: April 2018
Venue - Dates:
PV-SAT 14, Imperial College London, London, United Kingdom, 2018-04-18 - 2018-04-20
Keywords:
Black silicon, Metal assisted chemical etching, Nanowires, Surface passivation, Silicon solar cells
Identifiers
Local EPrints ID: 422054
URI: http://eprints.soton.ac.uk/id/eprint/422054
PURE UUID: a4b0a983-497f-4133-ad0e-ed703cd21e28
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Date deposited: 13 Jul 2018 16:30
Last modified: 16 Jul 2024 01:46
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