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Optimisation of ex-situ annealing process for epitaxial silicon emitters via Hot Wire CVD

Optimisation of ex-situ annealing process for epitaxial silicon emitters via Hot Wire CVD
Optimisation of ex-situ annealing process for epitaxial silicon emitters via Hot Wire CVD
A refined Hot Wire Chemical Vapour Deposition (HWCVD) process for fabricating boron doped silicon emitters using a shortened anneal time and temperature is presented. We are able to crystallise our grown films with a post-deposition annealing treatment of 2 minutes at 800°C, a significant improvement from previous work using several hours at 1000°C. Direct implications of higher annealing temperatures on the film quality is discussed. In addition, the potential for in situ annealing using a higher deposition temperature is presented, with future works aiming to find and apply the optimum deposition temperature for epitaxial silicon with HWCVD.
Hot Wire chemical vapour deposition, Epitaxy, epitaxial growth, Silicon, IBC, solar , solar cell , Silicon photonics, raman spectroscopy, Emitter, p+ emitter, boron-doped silicon, annealing, Solar cell fabrication
Khorani, Edris
bbdfbcc3-5dd0-4a73-80ed-7a0bff1d5388
Scheul, Tudor, Emilian
daf1d539-813a-4f66-b2c1-86f7e91fde8c
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Khorani, Edris
bbdfbcc3-5dd0-4a73-80ed-7a0bff1d5388
Scheul, Tudor, Emilian
daf1d539-813a-4f66-b2c1-86f7e91fde8c
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8

Khorani, Edris, Scheul, Tudor, Emilian, Tarazona, Antulio, Rahman, Tasmiat and Boden, Stuart (2018) Optimisation of ex-situ annealing process for epitaxial silicon emitters via Hot Wire CVD. PV-SAT 14, London, United Kingdom. 18 - 20 Apr 2018.

Record type: Conference or Workshop Item (Paper)

Abstract

A refined Hot Wire Chemical Vapour Deposition (HWCVD) process for fabricating boron doped silicon emitters using a shortened anneal time and temperature is presented. We are able to crystallise our grown films with a post-deposition annealing treatment of 2 minutes at 800°C, a significant improvement from previous work using several hours at 1000°C. Direct implications of higher annealing temperatures on the film quality is discussed. In addition, the potential for in situ annealing using a higher deposition temperature is presented, with future works aiming to find and apply the optimum deposition temperature for epitaxial silicon with HWCVD.

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More information

Published date: April 2018
Venue - Dates: PV-SAT 14, London, United Kingdom, 2018-04-18 - 2018-04-20
Keywords: Hot Wire chemical vapour deposition, Epitaxy, epitaxial growth, Silicon, IBC, solar , solar cell , Silicon photonics, raman spectroscopy, Emitter, p+ emitter, boron-doped silicon, annealing, Solar cell fabrication

Identifiers

Local EPrints ID: 422060
URI: https://eprints.soton.ac.uk/id/eprint/422060
PURE UUID: dc7486a8-27c0-40a1-a749-38ee7f8c4b95
ORCID for Tudor, Emilian Scheul: ORCID iD orcid.org/0000-0003-4517-6096
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 13 Jul 2018 16:30
Last modified: 14 Mar 2019 01:42

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