Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films
Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films
This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn3P2 have a number of potential applications and phosphinecarboxamide is a safer and more efficient precursor than the highly toxic, corrosive and flammable phosphine used in previous CVD syntheses.
Beddoe, Samuel V.F.
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Cosham, Samuel D.
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Kulak, Alexander N.
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Jupp, Andrew R.
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Goicoecheac, Jose M.
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Hyett, Geoffrey
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Beddoe, Samuel V.F.
f029ab1b-b5ad-4c0c-9243-fbf876f5bbe6
Cosham, Samuel D.
a2dd18d3-e232-44b6-baa0-3ba0e2aba2be
Kulak, Alexander N.
6f876132-de0d-46d4-b183-8d07c4c1408d
Jupp, Andrew R.
f779662e-544b-4eec-907a-be04107b68cd
Goicoecheac, Jose M.
4312fb00-f8b4-4611-a6de-0d5a3d54e664
Hyett, Geoffrey
4f292fc9-2198-4b18-99b9-3c74e7dfed8d
Beddoe, Samuel V.F., Cosham, Samuel D., Kulak, Alexander N., Jupp, Andrew R., Goicoecheac, Jose M. and Hyett, Geoffrey
(2018)
Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films.
Dalton Transactions.
(doi:10.1039/C8DT00544C).
Abstract
This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn3P2 have a number of potential applications and phosphinecarboxamide is a safer and more efficient precursor than the highly toxic, corrosive and flammable phosphine used in previous CVD syntheses.
Text
Zinc Phosphide Communication_V3
- Accepted Manuscript
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Accepted/In Press date: 20 June 2018
e-pub ahead of print date: 20 June 2018
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Local EPrints ID: 422062
URI: http://eprints.soton.ac.uk/id/eprint/422062
ISSN: 0300-9246
PURE UUID: 9422c3ea-6fc3-4bb6-969a-efb4729d4a16
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Date deposited: 13 Jul 2018 16:30
Last modified: 16 Mar 2024 06:47
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Contributors
Author:
Samuel V.F. Beddoe
Author:
Samuel D. Cosham
Author:
Alexander N. Kulak
Author:
Andrew R. Jupp
Author:
Jose M. Goicoecheac
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