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Metal/semiconductor contacts to silicon carbide: Physics and technology

Metal/semiconductor contacts to silicon carbide: Physics and technology
Metal/semiconductor contacts to silicon carbide: Physics and technology

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4HSiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

4H-SiC, Ohmic contacts, Schottky contacts
0255-5476
339-344
Trans Tech Publications
Roccaforte, Fabrizio
5b41d34f-67ea-44a4-8c08-0f3f6d7b8e6a
Vivona, Marilena
d5097400-64be-4d8a-99d2-8ecc6e3dbbed
Greco, Giuseppe
1ba3fd8e-7f18-4f83-9ea3-105847ff38f6
Lo Nigro, Raffaella
3e8dfee7-34e0-43bf-aa86-24a4a08f873d
Giannazzo, Filippo
ee305f1f-51d1-459e-bf10-aa4e7055f93e
Rascunà, Simone
b4ed5506-02fd-492e-a23c-5f9d7d5b22b4
Saggio, Mario
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Roccaforte, Fabrizio
5b41d34f-67ea-44a4-8c08-0f3f6d7b8e6a
Vivona, Marilena
d5097400-64be-4d8a-99d2-8ecc6e3dbbed
Greco, Giuseppe
1ba3fd8e-7f18-4f83-9ea3-105847ff38f6
Lo Nigro, Raffaella
3e8dfee7-34e0-43bf-aa86-24a4a08f873d
Giannazzo, Filippo
ee305f1f-51d1-459e-bf10-aa4e7055f93e
Rascunà, Simone
b4ed5506-02fd-492e-a23c-5f9d7d5b22b4
Saggio, Mario
6144145b-a64e-496c-ba06-e614033a3371

Roccaforte, Fabrizio, Vivona, Marilena, Greco, Giuseppe, Lo Nigro, Raffaella, Giannazzo, Filippo, Rascunà, Simone and Saggio, Mario (2018) Metal/semiconductor contacts to silicon carbide: Physics and technology. In Silicon Carbide and Related Materials, 2017. vol. 924 MSF, Trans Tech Publications. pp. 339-344 . (doi:10.4028/www.scientific.net/MSF.924.339).

Record type: Conference or Workshop Item (Paper)

Abstract

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4HSiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

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Accepted/In Press date: 30 December 2017
e-pub ahead of print date: 5 June 2018
Venue - Dates: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, , Columbia, United States, 2017-09-17 - 2017-09-22
Keywords: 4H-SiC, Ohmic contacts, Schottky contacts

Identifiers

Local EPrints ID: 422643
URI: http://eprints.soton.ac.uk/id/eprint/422643
ISSN: 0255-5476
PURE UUID: 0309ba98-218c-41df-9a5d-aeada044b8f2
ORCID for Marilena Vivona: ORCID iD orcid.org/0000-0002-0765-8556

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Date deposited: 27 Jul 2018 16:30
Last modified: 05 Jun 2024 19:55

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Contributors

Author: Fabrizio Roccaforte
Author: Marilena Vivona ORCID iD
Author: Giuseppe Greco
Author: Raffaella Lo Nigro
Author: Filippo Giannazzo
Author: Simone Rascunà
Author: Mario Saggio

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