Metal/semiconductor contacts to silicon carbide: Physics and technology
Metal/semiconductor contacts to silicon carbide: Physics and technology
The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4HSiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.
4H-SiC, Ohmic contacts, Schottky contacts
339-344
Roccaforte, Fabrizio
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Vivona, Marilena
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Greco, Giuseppe
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Lo Nigro, Raffaella
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Giannazzo, Filippo
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Rascunà, Simone
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Saggio, Mario
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Roccaforte, Fabrizio
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Vivona, Marilena
d5097400-64be-4d8a-99d2-8ecc6e3dbbed
Greco, Giuseppe
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Lo Nigro, Raffaella
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Giannazzo, Filippo
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Rascunà, Simone
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Saggio, Mario
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Roccaforte, Fabrizio, Vivona, Marilena, Greco, Giuseppe, Lo Nigro, Raffaella, Giannazzo, Filippo, Rascunà, Simone and Saggio, Mario
(2018)
Metal/semiconductor contacts to silicon carbide: Physics and technology.
In Silicon Carbide and Related Materials, 2017.
vol. 924 MSF,
Trans Tech Publications.
.
(doi:10.4028/www.scientific.net/MSF.924.339).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4HSiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.
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Metal/semiconductor contacts to Silicon Carbide:
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Accepted/In Press date: 30 December 2017
e-pub ahead of print date: 5 June 2018
Venue - Dates:
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, , Columbia, United States, 2017-09-17 - 2017-09-22
Keywords:
4H-SiC, Ohmic contacts, Schottky contacts
Identifiers
Local EPrints ID: 422643
URI: http://eprints.soton.ac.uk/id/eprint/422643
ISSN: 0255-5476
PURE UUID: 0309ba98-218c-41df-9a5d-aeada044b8f2
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Date deposited: 27 Jul 2018 16:30
Last modified: 15 Mar 2024 20:54
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Contributors
Author:
Fabrizio Roccaforte
Author:
Marilena Vivona
Author:
Giuseppe Greco
Author:
Raffaella Lo Nigro
Author:
Filippo Giannazzo
Author:
Simone Rascunà
Author:
Mario Saggio
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