Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition

Abstract

We have recently reported a new method for electrodeposition of thin film and nanostructured phase change memory (PCM) devices from a single, highly tuneable, non-aqueous electrolyte. The quality of the material was confirmed by phase cycling via electrical pulsed switching of both 100 nm nano-cells and thin film devices. This method potentially allows deposition into extremely small confined cells down to less than 5 nm, 3D lay-outs that require non-line-of-sight techniques, and seamless integration of integrated selector devices. As electrodeposition requires a conducting substrate, the key condition for electronic applications based on this method is the use of patterned metal lines as the working electrode during the electrodeposition process. In this paper we show design and fabrication of a 2D passive memory matrix in which the word lines act as the working electrode and nucleation site for the growth of confined cells of Ge-Sb-Te. We will discuss the precursor requirement for deposition from non-aqueous, weakly coodinating solvents, show transmission electron microscopy analysis of the electrodeposition growth process and elemental distribution in the deposits, and the fabrication and characterisation of the Ge-Sb-Te memory matrix.

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Identifiers

ORCID for Ruomeng Huang: orcid.org/0000-0003-1185-635X

ORCID for Gabriela Kissling: orcid.org/0000-0003-4701-7160

ORCID for Yasir Noori: orcid.org/0000-0001-5285-8779

ORCID for Andrew L. Hector: orcid.org/0000-0002-9964-2163

ORCID for Gillian Reid: orcid.org/0000-0001-5349-3468

ORCID for Philip N. Bartlett: orcid.org/0000-0002-7300-6900

ORCID for Cornelis De Groot: orcid.org/0000-0002-3850-7101

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