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Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition

Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition
Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition
We have recently reported a new method for electrodeposition of thin film and nanostructured phase change memory (PCM) devices from a single, highly tuneable, non-aqueous electrolyte. The quality of the material was confirmed by phase cycling via electrical pulsed switching of both 100 nm nano-cells and thin film devices. This method potentially allows deposition into extremely small confined cells down to less than 5 nm, 3D lay-outs that require non-line-of-sight techniques, and seamless integration of integrated selector devices. As electrodeposition requires a conducting substrate, the key condition for electronic applications based on this method is the use of patterned metal lines as the working electrode during the electrodeposition process. In this paper we show design and fabrication of a 2D passive memory matrix in which the word lines act as the working electrode and nucleation site for the growth of confined cells of Ge-Sb-Te. We will discuss the precursor requirement for deposition from non-aqueous, weakly coodinating solvents, show transmission electron microscopy analysis of the electrodeposition growth process and elemental distribution in the deposits, and the fabrication and characterisation of the Ge-Sb-Te memory matrix.
0301-7249
1-17
Huang, Ruomeng
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Kissling, Gabriela
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Kashtiban, Reza J.
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Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Cicvaric, Katarina
ed688ac1-6d46-4481-8825-9e3978dabfd1
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Hector, Andrew L.
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Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
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Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Kashtiban, Reza J.
2f6b0979-49ee-4e16-9c52-1ed7653c0485
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Cicvaric, Katarina
ed688ac1-6d46-4481-8825-9e3978dabfd1
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, Ruomeng, Kissling, Gabriela, Kashtiban, Reza J., Noori, Yasir, Cicvaric, Katarina, Zhang, Wenjian, Hector, Andrew L., Smith, David, Reid, Gillian, Bartlett, Philip N. and De Groot, Cornelis (2018) Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition. Faraday Discussions, 1-17. (doi:10.1039/C8FD00126J).

Record type: Article

Abstract

We have recently reported a new method for electrodeposition of thin film and nanostructured phase change memory (PCM) devices from a single, highly tuneable, non-aqueous electrolyte. The quality of the material was confirmed by phase cycling via electrical pulsed switching of both 100 nm nano-cells and thin film devices. This method potentially allows deposition into extremely small confined cells down to less than 5 nm, 3D lay-outs that require non-line-of-sight techniques, and seamless integration of integrated selector devices. As electrodeposition requires a conducting substrate, the key condition for electronic applications based on this method is the use of patterned metal lines as the working electrode during the electrodeposition process. In this paper we show design and fabrication of a 2D passive memory matrix in which the word lines act as the working electrode and nucleation site for the growth of confined cells of Ge-Sb-Te. We will discuss the precursor requirement for deposition from non-aqueous, weakly coodinating solvents, show transmission electron microscopy analysis of the electrodeposition growth process and elemental distribution in the deposits, and the fabrication and characterisation of the Ge-Sb-Te memory matrix.

Text
GST by electrodeposition Huang de Groot (after revision)v2 - Accepted Manuscript
Restricted to Repository staff only until 20 July 2019.
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Accepted/In Press date: 16 July 2018
e-pub ahead of print date: 20 July 2018

Identifiers

Local EPrints ID: 422858
URI: https://eprints.soton.ac.uk/id/eprint/422858
ISSN: 0301-7249
PURE UUID: e870f8b9-bba5-49d6-b8de-3fb0965e7a8f
ORCID for Gabriela Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 07 Aug 2018 16:30
Last modified: 14 Mar 2019 02:00

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Contributors

Author: Ruomeng Huang
Author: Reza J. Kashtiban
Author: Yasir Noori ORCID iD
Author: Katarina Cicvaric
Author: Wenjian Zhang
Author: David Smith
Author: Gillian Reid ORCID iD

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