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Recycled IC detection through aging sensor

Recycled IC detection through aging sensor
Recycled IC detection through aging sensor

In this paper, we propose a novel technique to detect recycled ICs via an on-chip, coarse-grained aging sensor, which can be applied to low-power circuits featuring power gating. The sensor detects the increase in the power-rail discharge time of power-gated circuits, when the circuit enters the sleep condition. Through HSPICE simulations, we prove that power network discharge time (τdV) is extremely sensitive to the age of the circuit. Indeed, after only 1 month of operation, τdV increases by more than 3X and, after 1 year, its increase exceeds 7X. Our technique enables the detection of recycled ICs with a very high confidence and is a considerably more sensitive indicator of an aged device that alternative solutions relying on fine-grained performance degradation sensors.

1-2
Institute of Electrical and Electronics Engineers Inc.
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Tenentes, Vasileios
1bff9ebc-9186-438b-850e-6c738994fa39
Khursheed, Saqib
0c4e3d52-0df5-43d9-bafe-d2eaea457506
Reddy, Sudhakar M.
de17466f-a41a-4ec1-b148-a0105a2db68d
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Tenentes, Vasileios
1bff9ebc-9186-438b-850e-6c738994fa39
Khursheed, Saqib
0c4e3d52-0df5-43d9-bafe-d2eaea457506
Reddy, Sudhakar M.
de17466f-a41a-4ec1-b148-a0105a2db68d

Rossi, Daniele, Tenentes, Vasileios, Khursheed, Saqib and Reddy, Sudhakar M. (2018) Recycled IC detection through aging sensor. In Proceedings - 2018 23rd IEEE European Test Symposium, ETS 2018. vol. 2018-May, Institute of Electrical and Electronics Engineers Inc. pp. 1-2 . (doi:10.1109/ETS.2018.8400713).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper, we propose a novel technique to detect recycled ICs via an on-chip, coarse-grained aging sensor, which can be applied to low-power circuits featuring power gating. The sensor detects the increase in the power-rail discharge time of power-gated circuits, when the circuit enters the sleep condition. Through HSPICE simulations, we prove that power network discharge time (τdV) is extremely sensitive to the age of the circuit. Indeed, after only 1 month of operation, τdV increases by more than 3X and, after 1 year, its increase exceeds 7X. Our technique enables the detection of recycled ICs with a very high confidence and is a considerably more sensitive indicator of an aged device that alternative solutions relying on fine-grained performance degradation sensors.

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More information

e-pub ahead of print date: 28 May 2018
Published date: 29 June 2018
Venue - Dates: 23rd IEEE European Test Symposium, ETS 2018, , Bremen, Germany, 2018-05-27 - 2018-05-31

Identifiers

Local EPrints ID: 423091
URI: http://eprints.soton.ac.uk/id/eprint/423091
PURE UUID: a67c5e21-f973-46dd-bac5-a04d112ceeef

Catalogue record

Date deposited: 14 Aug 2018 16:30
Last modified: 25 Nov 2021 17:57

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Contributors

Author: Daniele Rossi
Author: Vasileios Tenentes
Author: Saqib Khursheed
Author: Sudhakar M. Reddy

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